Paper
3 May 1988 Excitonic Optical Nonlinearities In ZnSe Epitaxial Films
J E Potts, H Cheng, S H Park, B Fluegel, M Joffre, S W Koch, N Peyghambarian
Author Affiliations +
Proceedings Volume 0881, Optical Computing and Nonlinear Materials; (1988) https://doi.org/10.1117/12.944069
Event: 1988 Los Angeles Symposium: O-E/LASE '88, 1988, Los Angeles, CA, United States
Abstract
Excitonic optical nonlinearities in epitaxial ZnSe thin films have been measured at 150 and 300K. The measured nonlinear response, An/N = 1.8X10-19 cm3 at 300K, is comparable to that observed in bulk GaAs and GaAs/AlGaAs multiple quantum well systems. Analysis of these results using our partly-phenomenological plasma theory indicates that the mechanisms responsible for this nonlinearity at room temperature are exciton screening and density-dependent broadening. At 150K, exciton screening makes the major contribution to the nonlinearity. Using femtosecond laser techniques, we have determined that the nonlinearity turns off in times on the order of 50-100 ps. These excitonic nonlinearities are, therefore, both large in magnitude and extremely rapid.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J E Potts, H Cheng, S H Park, B Fluegel, M Joffre, S W Koch, and N Peyghambarian "Excitonic Optical Nonlinearities In ZnSe Epitaxial Films", Proc. SPIE 0881, Optical Computing and Nonlinear Materials, (3 May 1988); https://doi.org/10.1117/12.944069
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Cited by 8 scholarly publications.
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KEYWORDS
Excitons

Absorption

Nonlinear optics

Gallium arsenide

Picosecond phenomena

Luminescence

Laser beam diagnostics

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