Paper
20 August 2013 Synthesis and characterization of ZnTe thin films on silicon by thermal-furnace evaporation
Jenn-Sen Lin, Shih-Syun Wei, Yi-Ting Yu, Cheng-Hsing Hsu, Wen-Hua Kao, Wen-Shiush Chen, Ching-Fang Tseng, Chun-Hung Lai, Jian-Ming Lu, Shin-Pon Ju, Jin-Yuan Hsieh
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Proceedings Volume 8913, International Symposium on Photoelectronic Detection and Imaging 2013: Optical Storage and Display Technology; 89130K (2013) https://doi.org/10.1117/12.2033133
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
Zinc telluride (ZnTe) compound is one of the attractive elements of the II–VI group also having wide range of applications such as switching devices, light-emitting diode, solar cells and photodetectors. In this paper, the microstructure and electrical properties of znic telluride thin films were studied by using thermal-furnace evaporation with emphasis on the effects of argon pressure and deposition temperature. Crystallinity, mobility, carrier concentration and sheet resistance are shown to be dependent on the argon pressure and deposition temperature. The grain size was increased with increasing the annealing temperature and decreasing the argon pressure. The highest carrier concentration of 1.9×1016 cm-3, the lowest sheet resistance of 3180 Ω/ and the largest mobility of 5.1×103 cm2V-1S-1 are presented at an argon pressure of 100°sccm and a deposition temperature of 580°C, respectively.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jenn-Sen Lin, Shih-Syun Wei, Yi-Ting Yu, Cheng-Hsing Hsu, Wen-Hua Kao, Wen-Shiush Chen, Ching-Fang Tseng, Chun-Hung Lai, Jian-Ming Lu, Shin-Pon Ju, and Jin-Yuan Hsieh "Synthesis and characterization of ZnTe thin films on silicon by thermal-furnace evaporation", Proc. SPIE 8913, International Symposium on Photoelectronic Detection and Imaging 2013: Optical Storage and Display Technology, 89130K (20 August 2013); https://doi.org/10.1117/12.2033133
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KEYWORDS
Argon

Thin films

Resistance

Zinc

Scanning electron microscopy

Temperature metrology

Crystals

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