Development toward high-power sub-1-ohm DC-67 GHz RF switches using phase change materials for reconfigurable RF front-end

Jeong-sun Moon; Hwa-chang Seo; Duc Le

doi:10.1117/12.2059323

17 June 2014 Development toward high-power sub-1-ohm DC-67 GHz RF switches using phase change materials for reconfigurable RF front-end

Jeong-sun Moon, Hwa-chang Seo, Duc Le

Author Affiliations +

Proceedings Volume 9096, Open Architecture/Open Business Model Net-Centric Systems and Defense Transformation 2014; 90960A (2014) https://doi.org/10.1117/12.2059323
Event: SPIE Defense + Security, 2014, Baltimore, MD, United States

Abstract

We report GeTe-based phase change material RF switches with on-state resistance of 0.07 ohm*mm and off-state capacitance of 20 fF/mm. The RF switch figure-of-merit, R_on*C_off is comparable to RF MEMS ohmic switches. The PCM RF shunt and series switches were fabricated for the first time in a lateral FET configuration to reduce parasitics, different from the vertical via switches. In a shunt switch configuration, isolation of 30 dB was achieved up to 67 GHz with return loss of 15 dB. RF power handling was tested with ~10 W for series and 3 W for shunt configurations. Harmonic powers were suppressed more than 100 dBc at fundamental power of 1 W, for future tunable and reconfigurable RF technology.

Citation Download Citation

Jeong-sun Moon, Hwa-chang Seo, and Duc Le "Development toward high-power sub-1-ohm DC-67 GHz RF switches using phase change materials for reconfigurable RF front-end", Proc. SPIE 9096, Open Architecture/Open Business Model Net-Centric Systems and Defense Transformation 2014, 90960A (17 June 2014); https://doi.org/10.1117/12.2059323

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