Improvements to crystal quality of sapphire grown by the Kyropoulos method

John P. Ciraldo; Jonathan Levine; Hasitha Ganegoda

doi:10.1117/12.2049860

21 May 2014 Improvements to crystal quality of sapphire grown by the Kyropoulos method

John P. Ciraldo, Jonathan Levine, Hasitha Ganegoda

Author Affiliations +

Proceedings Volume 9100, Image Sensing Technologies: Materials, Devices, Systems, and Applications; 91000Q (2014) https://doi.org/10.1117/12.2049860
Event: SPIE Sensing Technology + Applications, 2014, Baltimore, MD, United States

Abstract

Strict process control, combined with proprietary process enhancements have enabled the production of large-scale single-crystal sapphire that demonstrates crystalline quality in excess of what has previously been possible. Extremely low defect densities, narrow rocking-curves, and very low stress gradients in the material are demonstrated through various X-ray diffraction techniques.

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John P. Ciraldo, Jonathan Levine, and Hasitha Ganegoda "Improvements to crystal quality of sapphire grown by the Kyropoulos method", Proc. SPIE 9100, Image Sensing Technologies: Materials, Devices, Systems, and Applications, 91000Q (21 May 2014); https://doi.org/10.1117/12.2049860

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