Paper
20 February 2015 Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers
Pier J. A. Sazio, Justin R. Sparks, Rongrui He, Mahesh Krishnamurthi, Thomas C. Fitzgibbons, Subhasis Chaudhuri, Neil F. Baril, Anna C. Peacock, Noel Healy, Venkatraman Gopalan, John V. Badding
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Abstract
ZnSe and other zinc chalcogenide semiconductor materials can be doped with divalent transition metal ions to create a mid-IR laser gain medium with active function in the wavelength range 2 - 5 microns and potentially beyond using frequency conversion. As a step towards fiberized laser devices, we have manufactured ZnSe semiconductor fiber waveguides with low (less than 1dB/cm at 1550nm) optical losses, as well as more complex ternary alloys with ZnSxSe(1-x) stoichiometry to potentially allow for annular heterostructures with effective and low order mode corecladding waveguiding.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pier J. A. Sazio, Justin R. Sparks, Rongrui He, Mahesh Krishnamurthi, Thomas C. Fitzgibbons, Subhasis Chaudhuri, Neil F. Baril, Anna C. Peacock, Noel Healy, Venkatraman Gopalan, and John V. Badding "Templated growth of II-VI semiconductor optical fiber devices and steps towards infrared fiber lasers", Proc. SPIE 9342, Solid State Lasers XXIV: Technology and Devices, 93420A (20 February 2015); https://doi.org/10.1117/12.2083045
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KEYWORDS
Semiconductors

Optical fibers

Waveguides

Silica

Fiber lasers

Micro optical fluidics

Surface roughness

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