New approach to improve LER of EUV resist pattern by chemical and thermal treatment

Tatsuro Nagahara; Kazuma Yamamoto; Yuriko Matsuura; Takashi Sekito

doi:10.1117/12.2085713

13 March 2015 New approach to improve LER of EUV resist pattern by chemical and thermal treatment

Tatsuro Nagahara, Kazuma Yamamoto, Yuriko Matsuura, Takashi Sekito

Author Affiliations +

Proceedings Volume 9422, Extreme Ultraviolet (EUV) Lithography VI; 94222F (2015) https://doi.org/10.1117/12.2085713
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

In this paper, we discuss a new approach to improve the resist roughness, which is applied after the lithography process. The ERC (Edge Roughness Controller) process is composed of two steps, 1) To deliver resist softening material at the resist surface 2) To give thermal flow at that region in the bake step. Several samples were prepared based on this concept and consistent improvement was observed. Finally, by optimizing ERC chemistry using HSP (Hansen Solubility Parameter), LWR improvement of 14.8% could be achieved.

Citation Download Citation

Tatsuro Nagahara, Kazuma Yamamoto, Yuriko Matsuura, and Takashi Sekito "New approach to improve LER of EUV resist pattern by chemical and thermal treatment", Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94222F (13 March 2015); https://doi.org/10.1117/12.2085713

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