Demonstration of the benefits of these technologies is provided through results from recent experiments at imec. Changes in patterning performance are characterized using top down CD-SEM metrology, enabling excellent correlation between optical parameters and on wafer attributes for typical patterning geometries. In addition, new results show that changes in laser beam parameter performance can have measurable wafer patterning and/or illumination impacts. Chipmakers can benefit from the use of this capability to perform proactive, comprehensive characterization of current and next generation process nodes. |
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CITATIONS
Cited by 2 scholarly publications.
Optical lithography
Modulation
Light sources
Semiconducting wafers
Lithography
Neodymium
Wafer-level optics