Paper
18 March 2015 OPC solution by implementing fast converging methodology
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Abstract
Traditionally, the optical proximity correction (OPC) is to deliver the solution to ensure the nominal after-development-inspection (ADI) contours on target. As the technology node keeps shrinking to 28nm and beyond, the OPC is expected to cover the lithography process window (PW), etch PW, and overlay margin as well. As a result, more and more advanced functions are included in OPC to achieve the awareness of multiple cost functions, such as the nominal EPE, PW effective EPE, the enclosure of above and underneath layers, and so on. These inclusions are at the cost of the run time and complexity of OPC solution. In this paper, we demonstrated a methodology by adopting design rule check (DRC) algorithm in repair flow to fix hot spots. In accordance to OPC verification check, the subsequent DRC movements were applied to those hot spots only. With a straightforward recipe tuning, a fast convergence of OPC can be achieved. The results exhibit the run time improvement without compromising the OPC performance. We further evaluated by real cases the effects of the DRC-based repair algorithm on the error convergence and final repair effects, by comparing to the standard OPC solution.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qing Yang and Yaojun Du "OPC solution by implementing fast converging methodology", Proc. SPIE 9426, Optical Microlithography XXVIII, 94261V (18 March 2015); https://doi.org/10.1117/12.2085304
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Cited by 4 patents.
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KEYWORDS
Optical proximity correction

Semiconducting wafers

Detection and tracking algorithms

Etching

Lithography

Model-based design

Photomasks

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