Design and analysis of AlGaInP-based light emitting diodes with SiO2 current blocking layer

Li Ma; Guang-di Shen; Chen Xu; Zhi-Yuan Gao

doi:10.1117/12.2083261

19 February 2015 Design and analysis of AlGaInP-based light emitting diodes with SiO₂ current blocking layer

Li Ma, Guang-di Shen, Chen Xu, Zhi-Yuan Gao

Author Affiliations +

Proceedings Volume 9449, The International Conference on Photonics and Optical Engineering (icPOE 2014); 94491R (2015) https://doi.org/10.1117/12.2083261
Event: The International Conference on Photonics and Optical Engineering and the Annual West China Photonics Conference (icPOE 2014), 2014, Xi'an, China

Abstract

In this study, the fabrication and characterization of AlGaInP-based light-emitting diodes (LEDs) with further improvement by the design of a SiO2 current blocking layer were described. It was found that with the SiO₂ CBL, the injected current can be forced to spread outside instead of flowing directly downward under the p-pad electrode. At 20mA, as compared to traditional LEDs, the optical output power for novel LEDs is increased by about 30%. We found that the novel LEDs have better saturation characteristics, this improvement is contributed to more uniform of injection current and less heat generation in the novel LED chips.

Citation Download Citation

Li Ma, Guang-di Shen, Chen Xu, and Zhi-Yuan Gao "Design and analysis of AlGaInP-based light emitting diodes with SiO₂ current blocking layer", Proc. SPIE 9449, The International Conference on Photonics and Optical Engineering (icPOE 2014), 94491R (19 February 2015); https://doi.org/10.1117/12.2083261

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