Study of photoemission mechanism for varied doping GaN photocathode

Jianliang Qiao; Yuan Xu; Jun Niu; Youtang Gao; Benkang Chang

doi:10.1117/12.2199773

15 October 2015 Study of photoemission mechanism for varied doping GaN photocathode

Jianliang Qiao, Yuan Xu, Jun Niu, Youtang Gao, Benkang Chang

Author Affiliations +

Proceedings Volume 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology; 96741X (2015) https://doi.org/10.1117/12.2199773
Event: Applied Optics and Photonics China (AOPC2015), 2015, Beijing, China

Abstract

Negative electron affinity (NEA) GaN photocathode has many virtues, such as high quantum efficiency, low dark current, concentrated electrons energy distribution and angle distribution, adjustive threshold and so on. The quantum efficiency is an important parameter for the preparation and evaluation of NEA GaN photocathode. The varied doping GaN photocathode has the directional inside electric field within the material, so the higher quantum efficiency can be obtained. The varied doping NEA GaN photocathode has better photoemission performance. According to the photoemission theory of NEA GaN photocathode, the quantum efficiency formulas for uniform doping and varied doping NEA GaN photocathodes were given. In the certain condition, the quantum efficiency formula for varied doping GaN photocathode consists with the uniform doping. The activation experiment was finished for varied doping GaN photocathode. The cleaning method and technics for varied doping GaN photocathode were given in detail. To get an atom clean surface, the heat cleaning must be done after the chemical cleaning. Using the activation and evaluation system for NEA photocathode, the varied doping GaN photocathode was activated with Cs and O, and the photocurrent curve for varied doping GaN photocathode was gotten.

Citation Download Citation

Jianliang Qiao, Yuan Xu, Jun Niu, Youtang Gao, and Benkang Chang "Study of photoemission mechanism for varied doping GaN photocathode", Proc. SPIE 9674, AOPC 2015: Optical and Optoelectronic Sensing and Imaging Technology, 96741X (15 October 2015); https://doi.org/10.1117/12.2199773

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE