Embedded NVM technology at BEOL for 14nm FinFET and beyond

Min-hwa Chi

doi:10.1117/12.2239936

12 October 2016 Embedded NVM technology at BEOL for 14nm FinFET and beyond

Min-hwa Chi

Proceedings Volume 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage; 981801 (2016) https://doi.org/10.1117/12.2239936
Event: 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 2016, Changzhou, China

Abstract

As the FinFET technology is state-of-art CMOS platform at 14nm node and beyond, the embedded non-volatile memory (NVM) technologies need to be fully compatible at front-of-line (FEOL) or back-of-line (BEOL), e.g. Phase-Change-RAM (PCRAM), Resistive-RAM (RRAM), Magnetic-RAM (MRAM), and Nanotube-RAM (NRAM). Each NVM technology at BEOL has its own challenges in program power/energy/speed, thermal stability, read/write stability, endurance, scalability, read/write margins, and degradation by Oxidation, thus, a combination of the NVM technologies at BEOL may offer new applications with capability of stacking-up into 3D array. The CNT-based logic and spin-based logic circuits can be integrated in BEOL and lead to powerful 3D-monolithic integration for new applications with high performance and low power.

Citation Download Citation

Min-hwa Chi "Embedded NVM technology at BEOL for 14nm FinFET and beyond", Proc. SPIE 9818, 2016 International Workshop on Information Data Storage and Tenth International Symposium on Optical Storage, 981801 (12 October 2016); https://doi.org/10.1117/12.2239936

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