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9 March 2022 InGaN-based RGB micro-LED arrays
Kazuhiro Ohkawa, Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo
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Proceedings Volume PC12022, Light-Emitting Devices, Materials, and Applications XXVI; PC1202202 (2022) https://doi.org/10.1117/12.2608199
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
We can grow high-In-content InGaN-based red LED structures by our original MOVPE. Using commercial InGaN-based blue and green LED wafers, we have fabricated RGB micro-LEDs and RGB monochromatic 10 X 10 micro-LED arrays. The size of the micro-LED was 17 m square. The red array showed the peak wavelength at 630 nm and the FWHM of 62.9 nm at 50 A/cm2. Its light output power density was as high as 176 mW/cm2, and the absolute EQE was approximately 0.4%. The RGB micro-LED arrays covered as good as 81.3% of the Rec. 2020 color space in CIE 1931 at 50 A/cm2.
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Kazuhiro Ohkawa, Zhe Zhuang, Daisuke Iida, and Martin Velazquez-Rizo "InGaN-based RGB micro-LED arrays", Proc. SPIE PC12022, Light-Emitting Devices, Materials, and Applications XXVI, PC1202202 (9 March 2022); https://doi.org/10.1117/12.2608199
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KEYWORDS
RGB color model
Light emitting diodes
CIE 1931 color space
Epitaxy
External quantum efficiency
Green light emitting diodes
Indium gallium nitride
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