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2D materials like transition metal dichalcogenides (TMDCs) are promising materials for the next generation of flexible devices. With low-temperature Atomic Layer Deposition a direct large area deposition of these materials on temperature sensitive substrates becomes possible. Due to these substrates conventional post- and further processing methods, like thermal annealing, are not suitable. With the usage of ultrashort pulsed Laser a moification of these films with very small heat-affected zones can be done. This allows a selective increase of crystallinity in amorphous MoS2 films or phase engineering between the metallic and semiconducting phase in MoS2 independent of the growing substrate.
Andreas Ostendorf,Malte Becher,Julia Jagosz, andClaudia Bock
"Laser-based modification of ALD-grown 2D-transition metal dichalcogenides", Proc. SPIE PC12410, Nanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2023, PC1241005 (17 March 2023); https://doi.org/10.1117/12.2651197
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Andreas Ostendorf, Malte Becher, Julia Jagosz, Claudia Bock, "Laser-based modification of ALD-grown 2D-transition metal dichalcogenides," Proc. SPIE PC12410, Nanoscale and Quantum Materials: From Synthesis and Laser Processing to Applications 2023, PC1241005 (17 March 2023); https://doi.org/10.1117/12.2651197