PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
In this work, we incorporate 50 InGaAs quantum wells (QWs) into the bottom junction of an InGaP/GaAs dual junction solar cell. Tensile GaAsP is used to compensate the compressive wells, enabling high quality growth confirmed by high resolution XRD. A distributed Bragg reflector (DBR) is grown below the device, centered on the QW absorptive region for improved optical path length in the QWs. These structures enable an increase of 2.6 mA/cm² from sub-gap absorption with a minimal loss in voltage (11 mV) compared to a control device without QWs or DBR, providing an absolute efficiency increase of 3.6% under AM0.
Stephen J. Polly,Brandon Bogner,Anastasiia Fedorenko,Subhra Chowdhury,Dhrubes Biswas, andSeth M. Hubbard
"Improving InGaP/GaAs dual junction photovoltaic efficiency with high quality InGaAs quantum wells (Conference Presentation)", Proc. SPIE PC12416, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII, PC124160A (10 March 2023); https://doi.org/10.1117/12.2655453
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Stephen J. Polly, Brandon Bogner, Anastasiia Fedorenko, Subhra Chowdhury, Dhrubes Biswas, Seth M. Hubbard, "Improving InGaP/GaAs dual junction photovoltaic efficiency with high quality InGaAs quantum wells (Conference Presentation)," Proc. SPIE PC12416, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XII, PC124160A (10 March 2023); https://doi.org/10.1117/12.2655453