Presentation
21 March 2023 Exploring the efficiency limits of AlGaN multi-quantum well deep UV-LEDs
Michael Kneissl, Giulia Cardinali, Martin Guttmann, Anton Muhin, Marcel Schilling, Luca Sulmoni, Tim Wernicke, Hyun Kyong Cho, Johannes Glaab, Arne Knauer, Tim Kolbe, Jan Ruschel, Sylvia Hagedorn, Neysha Lobo-Ploch, Carsten Netzel, Jens Rass, Sven Einfeldt, Markus Weyers
Author Affiliations +
Abstract
Light emitting diodes in the deep ultraviolet spectral range (DUV-LEDs) are of great interest for monitoring gases, pollutants in water as well as the in-vivo inactivation of multi-drug-resistant bacteria. This paper reviews advances in development of AlGaN-based DUV-LEDs, including the realization of low defect density AlN on sapphire. DUV-LEDs near 230 nm with output powers of more than 3 mW will be demonstrated and the root causes for the efficiency drop at shorter UV wavelength will be explored, including changes in the polarization of light emission, the role of point defects as well as carrier injection in AlGaN MQWs.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Kneissl, Giulia Cardinali, Martin Guttmann, Anton Muhin, Marcel Schilling, Luca Sulmoni, Tim Wernicke, Hyun Kyong Cho, Johannes Glaab, Arne Knauer, Tim Kolbe, Jan Ruschel, Sylvia Hagedorn, Neysha Lobo-Ploch, Carsten Netzel, Jens Rass, Sven Einfeldt, and Markus Weyers "Exploring the efficiency limits of AlGaN multi-quantum well deep UV-LEDs", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2651983
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KEYWORDS
Light emitting diodes

External quantum efficiency

Aluminum nitride

Deep ultraviolet

Sapphire

Skin

Polarization

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