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21 March 2023 Sputtering growth of n++-GaN shell in the tunnel junction on core-shell GaInN/GaN multi-quantum shell/nanowires
Yukimi Jinno, Sae Katsuro, Shiori Yamamura, Nanami Nakayama, Shiori Ii, Yuki Yamanaka, Mizuki Takahashi, Soma Inaba, Ayaka Shima, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2646907
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
A nitride-based light-emitting structure composed of a GaN nanowire core and a GaInN/GaN multi-quantum shell (MQS) is promising for high performance optoelectronic devices. By growing high crystalline quality MQS on the nonpolar (m-plane) sidewall of the nanowires, an improvement of luminous efficiency is expected. In this work, we induced the sputtering growth of n++-GaN shell on the tunnel junction/p-GaN/MQS/nanowire structures. By performing sputtering by the optimized condition, we were able to demonstrate a device with an operating voltage of about 1.0 V lower than that of the sample without sputtering.
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Yukimi Jinno, Sae Katsuro, Shiori Yamamura, Nanami Nakayama, Shiori Ii, Yuki Yamanaka, Mizuki Takahashi, Soma Inaba, Ayaka Shima, Satoshi Kamiyama, Tetsuya Takeuchi, and Motoaki Iwaya "Sputtering growth of n++-GaN shell in the tunnel junction on core-shell GaInN/GaN multi-quantum shell/nanowires", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2646907
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KEYWORDS
Sputter deposition
Nanowires
Gallium nitride
Doping
Hydrogen
Luminous efficiency
Magnesium
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