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High-density micro-light-emitting diode (μ-LED) arrays are the key to next-generation ultrahigh-resolution displays. We have demonstrated a full-color LED consisting of Eu-doped GaN and InGaN quantum wells (QWs). The full-color LED exhibited a remarkably wide color gamut and its maximum luminance reached over 3000 cd/m2. However, due to the quantum-confined Stark effects, the wavelength of a green LED shifted to a shorter wavelength as the injected current increased, which resulted in a reduced color gamut. There are two strategies in this regard; the use of a semi-polar substrate with reduced internal electric field and Tb-doped III-nitrides as a green emitter.
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