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16 March 2023 Phase stability of (AlxGa1-x)2O3 polymorphs: a first-principles study (Conference Presentation)
Sai Mu
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Proceedings Volume PC12422, Oxide-based Materials and Devices XIV; PC1242203 (2023) https://doi.org/10.1117/12.2659182
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Monoclinic β-Ga2O3 and its Al alloy (AlxGa1-x)2O3 are wide-bandgap materials and are of active interest due to their promising applications in power electronics. Several polymorphs (α,β,γ,κ) are known and are being pursued due their potential advantages for applications. A thorough understanding of the stability of the competing phases in Ga2O3 and (AlxGa1-x)2O3 is needed to promote the formation of the desired phase for device applications. We employ density functional theory to investigate the phase stability of Ga2O3 and (AlxGa1-x)2O3 at both zero temperature and finite temperature. We reveal that a unique configurational entropy is present in the γ phase due to cation vacancy disorder, and that it substantially contributes to stabilizing the γ phase in (AlxGa1-x)2O3 at finite temperature.
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Sai Mu "Phase stability of (AlxGa1-x)2O3 polymorphs: a first-principles study (Conference Presentation)", Proc. SPIE PC12422, Oxide-based Materials and Devices XIV, PC1242203 (16 March 2023); https://doi.org/10.1117/12.2659182
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KEYWORDS
Aluminum
Electronics
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