Presentation
16 March 2023 Doping of aluminum gallium oxide alloys (Conference Presentation)
Darshana Wickramaratne
Author Affiliations +
Proceedings Volume PC12422, Oxide-based Materials and Devices XIV; PC1242205 (2023) https://doi.org/10.1117/12.2658741
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Designs of electronic devices using aluminum gallium oxide (ALGO) alloys as the barrier layer and gallium oxide (Ga2O3) as the active layer are being considered. The success of these devices is predicated in part on the ability to achieve controlled doping of the ALGO barrier layer. First-principles calculations using hybrid functionals can be instrumental in guiding this effort. I will highlight which dopants can lead to controlled doping in high-Al content ALGO alloys, identify the optimal doping conditions and discuss the impact of the different ALGO polymorphs on this effort. This work was performed in collaboration with J. Varley, J.L. Lyons, S.Mu, M. Wang, and C.G. Van de Walle and was supported by ONR/NRL 6.1 Basic Research Program.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Darshana Wickramaratne "Doping of aluminum gallium oxide alloys (Conference Presentation)", Proc. SPIE PC12422, Oxide-based Materials and Devices XIV, PC1242205 (16 March 2023); https://doi.org/10.1117/12.2658741
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KEYWORDS
Doping

Gallium

Oxides

Aluminum

Basic research

Electronic components

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