Presentation
16 March 2023 Atomic layer deposited gallium oxide thin film monitored by continuous in-situ spectroscopic ellipsometry (Conference Presentation)
Florian Maudet
Author Affiliations +
Proceedings Volume PC12422, Oxide-based Materials and Devices XIV; PC124220E (2023) https://doi.org/10.1117/12.2664324
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
The growth of a-GaOx thin films by plasma-enhanced atomic layer deposition is studied by in-situ spectroscopic ellipsometry. A method is developed to extract the dielectric constant and thickness of ultrathin films (< 1 nm) unambiguously. The optical properties were calculated after each step and for all cycles, which allows to follow their evolution until a “bulk-like” gallium oxide film is reached. We show that a-GaOx films can be self-doped with the introduction of oxygen vacancies to obtain semiconducting properties. With additional information retrieved from the in-situ monitoring, a better understanding and faster development of growth processes are gained.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Florian Maudet "Atomic layer deposited gallium oxide thin film monitored by continuous in-situ spectroscopic ellipsometry (Conference Presentation)", Proc. SPIE PC12422, Oxide-based Materials and Devices XIV, PC124220E (16 March 2023); https://doi.org/10.1117/12.2664324
Advertisement
Advertisement
Back to Top