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The growth of a-GaOx thin films by plasma-enhanced atomic layer deposition is studied by in-situ spectroscopic ellipsometry. A method is developed to extract the dielectric constant and thickness of ultrathin films (< 1 nm) unambiguously. The optical properties were calculated after each step and for all cycles, which allows to follow their evolution until a “bulk-like” gallium oxide film is reached. We show that a-GaOx films can be self-doped with the introduction of oxygen vacancies to obtain semiconducting properties. With additional information retrieved from the in-situ monitoring, a better understanding and faster development of growth processes are gained.
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