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16 March 2023 Influence of rotational domains on disorder-induced variable-range-hopping conduction in Si-doped κ-Ga2O3 epitaxial films (Conference Presentation)
Antonella Parisini, Piero Mazzolini, Matteo Bosi, Luca Seravalli, Alessio Bosio, Roberto Fornari
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Proceedings Volume PC12422, Oxide-based Materials and Devices XIV; PC124220F (2023) https://doi.org/10.1117/12.2665469
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Variable-range-hopping (VRH) in-plane transport is detected by Hall effect measurements in Si-doped orthorhombic κ-Ga2O3 epitaxial films. Columnar rotational domains in nominally undoped the layers have size of tens of nm, while the dimension increases up to hundreds nm in Si-doped samples [https://doi.org/10.1002/adfm.202207821]. Significant anisotropy between in- and out-of-plane conductivity suggests that such domains play a significant role in the disorder-induced VRH transport. We discuss the variation of isothermal Hall mobility, Hall concentration and conductivity considering:(i) spatial scale of domain boundary irregularity, (ii) Si-doping level and compensation effects.
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Antonella Parisini, Piero Mazzolini, Matteo Bosi, Luca Seravalli, Alessio Bosio, and Roberto Fornari "Influence of rotational domains on disorder-induced variable-range-hopping conduction in Si-doped κ-Ga2O3 epitaxial films (Conference Presentation)", Proc. SPIE PC12422, Oxide-based Materials and Devices XIV, PC124220F (16 March 2023); https://doi.org/10.1117/12.2665469
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KEYWORDS
Silicon
Anisotropy
Sapphire
Semiconductors
Temperature metrology
Vapor phase epitaxy
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