X. Y. Zhao,1 A. F. McKenziehttps://orcid.org/0000-0001-5246-151X,1 C. W. Munro,1 S. L. Bayliss,1 K. J. Rae,1 D-H. Kim,1 D. A. MacLaren,1 R. A. Hogg,1 J. Liu1
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Large area 2D Selective Area Growth (SAG) of Multi-Quantum Well (MQW) structures is a key methodology required for realization of monolithic multicolor arrays of Photonic Crystal Surface Emitting Lasers (PCSELs) We present a study of InGaAs/GaAs MQWs selectively grown in square SAG windows with dimensions up to 300 x 300 μm2, by MOCVD. The range of QW emission wavelengths and thickness enhancements are elucidated by room-temperature μ-Photoluminescence (PL) and Optical Profilometry (OP) mapping, respectively. It is shown that large areas, ⪅ 100 x 100 μm2, with uniform PL emission can be achieved within a PL tuning range of 86 nm.
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X. Y. Zhao, A. F. McKenzie, C. W. Munro, S. L. Bayliss, K. J. Rae, D-H. Kim, D. A. MacLaren, R. A. Hogg, J. Liu, "2D selective area growth for photonic crystal surface emitting lasers," Proc. SPIE PC12440, Novel In-Plane Semiconductor Lasers XXII, PC1244006 (17 March 2023); https://doi.org/10.1117/12.2650317