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28 September 2023 Magnetic tunnel junctions designed for highly-sensitive magnetic sensor applications
Takafumi Nakano, Kosuke Fujiwara, Seiji Kumagai, Yasuo Ando, Mikihiko Oogane
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Proceedings Volume PC12656, Spintronics XVI; PC1265611 (2023) https://doi.org/10.1117/12.2676293
Event: SPIE Nanoscience + Engineering, 2023, San Diego, California, United States
Abstract
Magnetic tunnel junctions (MTJs) based on a CoFeB/MgO/CoFeB trilayer structure exhibit a giant tunnel magnetoresistance (TMR) effect. They can be grown on a commercialized Si wafer and can be combined with various magnetic materials into a multilayered structure. These advantages drive us to apply the CoFeB/MgO/CoFeB-MTJs to magnetic sensor (hereafter called TMR sensor) that can be used at room temperature, can be microfabricated into a nanometer-scale, and can be driven with a small power consumption. Very recently, its magnetic field detectivity has reached a sub-pT level which enables us to detect a human bio-magnetic fields. These outstanding characteristics are desirable for a next-generation smart society. In this talk, we will introduce our recent works on development of multilayered structures for the TMR sensor.
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Takafumi Nakano, Kosuke Fujiwara, Seiji Kumagai, Yasuo Ando, and Mikihiko Oogane "Magnetic tunnel junctions designed for highly-sensitive magnetic sensor applications", Proc. SPIE PC12656, Spintronics XVI, PC1265611 (28 September 2023); https://doi.org/10.1117/12.2676293
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KEYWORDS
Magnetic sensors
Magnetic tunnel junctions
Sensors
Industrial applications
Magnetism
Alloys
Composites
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