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29 September 2023 Bias stress stability in n-type polymer thin film transistors
Manikanta Makala, Derek Dremann, Maciej Barlog, Mohammed Al-Hashimi, Oana D. Jurchescu
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Proceedings Volume PC12662, Organic and Hybrid Transistors XXII; PC126620G (2023) https://doi.org/10.1117/12.2676054
Event: SPIE Organic Photonics + Electronics, 2023, San Diego, California, United States
Abstract
In addition to optimizing the charge carrier mobility (μ) in organic semiconductor devices, it is critical to improve operational stability. We investigated organic field-effect transistors (OFETs) made from several conjugated polymers based on indacenodithiazole (IDTz). Surface treatment of the electrode enabled us to tune the transport from p-type to n-type, while thermal annealing improved μ to 1.35 cm2/Vs. We bias-stressed the OFETs for about 24h hours at constant DC conditions (VGS= VDS= 60V) and found that in the most optimized devices only minor changes in the properties occur, i.e. 3% decrease in mobility and threshold voltage shift of maximum 2V.
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Manikanta Makala, Derek Dremann, Maciej Barlog, Mohammed Al-Hashimi, and Oana D. Jurchescu "Bias stress stability in n-type polymer thin film transistors", Proc. SPIE PC12662, Organic and Hybrid Transistors XXII, PC126620G (29 September 2023); https://doi.org/10.1117/12.2676054
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KEYWORDS
Transistors
Polymer thin films
Coating stress
Polymers
Field effect transistors
Annealing
Design and modelling
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