MOCVD process for 10 um+ thick β-Ga2O3 drift layers and doping control

Andrei V. Osinsky; Fikadu Alema; Aaron Fine

doi:10.1117/12.3011184

16 March 2024 MOCVD process for 10 um+ thick β-Ga₂O₃ drift layers and doping control

Andrei V. Osinsky, Fikadu Alema, Aaron Fine

Proceedings Volume PC12887, Oxide-based Materials and Devices XV; PC128870H (2024) https://doi.org/10.1117/12.3011184
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

This paper presents the advantages and disadvantages of using triethylgallium (TEGa) and trimethylgallium (TMGa) for realization of high-purity, carbon-free, epitaxial Ga2O3 films. Critical process conditions and MOCVD reactor geometries on achieving high purity β-Ga2O3 films with high electron mobility and low background carrier concentration, including doping control in this range, will be discussed. This paper will also discuss the MOCVD growth of high Al composition (up to 30%) high quality strained β-(AlGa)2O3/Ga2O3 heterostructures. To obtain semi insulating films, we will discuss Ga2O3 doping with nitrogen, comparing various nitrogen precursors. We will present the limitations of MOCVD technique for achieving heavily doped (>1020 1/cm3), highly conductive β-Ga2O3. We will present a new in-situ etching process for Ga2O3 in MOCVD using Ga and Cl based chemistry.

Conference Presentation

Citation Download Citation

Andrei V. Osinsky, Fikadu Alema, and Aaron Fine "MOCVD process for 10 um+ thick β-Ga₂O₃ drift layers and doping control ", Proc. SPIE PC12887, Oxide-based Materials and Devices XV, PC128870H (16 March 2024); https://doi.org/10.1117/12.3011184

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