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13 March 2024 High gain erbium doped aluminium oxide waveguide amplifiers integrated with silicon nitride circuits in a multi-layer platform
Dawson B. Bonneville, Carlos E. Osornio-Martínez, Ivo Hegeman, Meindert Dijkstra, Sonia M. García-Blanco
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Proceedings Volume PC12889, Integrated Optics: Devices, Materials, and Technologies XXVIII; PC1288906 (2024) https://doi.org/10.1117/12.3004710
Event: SPIE OPTO, 2024, San Francisco, California, United States
Abstract
Reactive sputtering provides a scalable and robust approach to fabricate erbium doped waveguide amplifiers and can be used to integrate devices with other waveguide platforms. In this work, we present recent results on high gain (>25 dB) in Al2O3:Er3+ amplifiers fabricated via reactive sputtering, which are vertically integrated with underlying LioniX TriPleX Si3N4 circuitry.
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Dawson B. Bonneville, Carlos E. Osornio-Martínez, Ivo Hegeman, Meindert Dijkstra, and Sonia M. García-Blanco "High gain erbium doped aluminium oxide waveguide amplifiers integrated with silicon nitride circuits in a multi-layer platform", Proc. SPIE PC12889, Integrated Optics: Devices, Materials, and Technologies XXVIII, PC1288906 (13 March 2024); https://doi.org/10.1117/12.3004710
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KEYWORDS
Waveguides
Aluminum oxide
Erbium
Silicon nitride
Ions
Quantum photonics
Silicon
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