Monolayer transition metal dichalcogenides (TMDs) are promising materials for electronics and photonics at highly scaled lateral dimensions. However, their low photon absorption poses a challenge for high-performance optoelectronic devices. We present plasmonic phototransistors (photoFETs) that integrate monolayer molybdenum disulfide (MoS2) with plasmonic metasurfaces, such as Ag, Bi, HfN, and TiN. These plasmonic photoFETs exhibit a significant enhancement in photocurrent compared to pristine 2D photoFETs, enabling high-performance devices with ultrahigh photoresponsivity. The enhancement is achieved through plasmonic nanostructures that enhance light absorption, photo-carrier generation, photo-gating, and hot-carrier transfer rates.
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