Rationale behind ultrafast optical response of Al-doped ZnO under intraband excitation

Conglong Chen

doi:10.1117/12.3016527

11 June 2024 Rationale behind ultrafast optical response of Al-doped ZnO under intraband excitation

Conglong Chen

Proceedings Volume PC12991, Nanophotonics X; PC1299109 (2024) https://doi.org/10.1117/12.3016527
Event: SPIE Photonics Europe, 2024, Strasbourg, France

Abstract

The different electron scattering in Al-doped ZnO (AZO) under intraband excitation was investigated through transient transmittance and reflectance. The electron-phonon scattering was probed to play a vital role in the hot carrier relaxation process while the electron-electron scattering also exhibits strong influence at high electron temperature.

Conference Presentation

Citation Download Citation

Conglong Chen "Rationale behind ultrafast optical response of Al-doped ZnO under intraband excitation", Proc. SPIE PC12991, Nanophotonics X, PC1299109 (11 June 2024); https://doi.org/10.1117/12.3016527

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