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11 June 2024 Spatial and spectral control of defects emission in hexagonal boron nitride
Giacomo Venturi, Stefano Chiodini, Nicola Melchioni, Eli Janzen, James H. Edgar, Carsten Ronning, Antonio Ambrosio
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Proceedings Volume PC12991, Nanophotonics X; PC129910K (2024) https://doi.org/10.1117/12.3017811
Event: SPIE Photonics Europe, 2024, Strasbourg, France
Abstract
This contribution discusses the role of hexagonal Boron Nitride (hBN) as a host for photon emitters. In this study we employ gallium ion implantation to create emitters within hBN. Gallium ions are found to be optimal for generating many emitters, when both the ion energy and fluence are carefully controlled. Post-irradiation thermal annealing induces defect transmutation, providing spectral tunability to the emitters. Together with Focused Ion Beam (FIB) implantation, allowing for nanoscale defect positioning, it is possible to precisely pattern multiple photon emitters at various optical frequencies on one platform. Overall, the research highlights hBN potential in advancing quantum technologies.
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Giacomo Venturi, Stefano Chiodini, Nicola Melchioni, Eli Janzen, James H. Edgar, Carsten Ronning, and Antonio Ambrosio "Spatial and spectral control of defects emission in hexagonal boron nitride", Proc. SPIE PC12991, Nanophotonics X, PC129910K (11 June 2024); https://doi.org/10.1117/12.3017811
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KEYWORDS
Boron nitride
Quantum control
Quantum emitters
Ions
Annealing
Quantum technologies
Silicon carbide
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