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4 October 2024 Spin- and orbital-charge conversion at the surface states of Bi1-xSbx topological insulator
Armando Pezo, Jean-Marie George, Henri Jaffrès
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Proceedings Volume PC13119, Spintronics XVII; PC131191Y (2024) https://doi.org/10.1117/12.3028486
Event: Nanoscience + Engineering, 2024, San Diego, California, United States
Abstract
Topological insulators are quantum materials characterized by Time-reversal protected surface states (TSS) which make them appealing candidates for the design of next generation of highly efficient spintronic devices. The very recent demonstration of large transient spin-charge conversion (SCC) and subsequent powerful THz emission from Co|Bi1-xSbx bilayers clearly demonstrate such potentiality and feasibility for the near future. Amongst the exotic properties appearing in and at the surface of such quantum materials, spin-momentum locking (SML) remains as a key ingredient to effectively convert the spin degree of freedom into a charge or a voltage signal. In that sense, in this work we will provide some clear theoretical and numerical insights implemented by multiorbital and multi-layered tight-binding methods (TB) to clarify our recent experimental results obtained by THz-TDS spectroscopy.
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Armando Pezo, Jean-Marie George, and Henri Jaffrès "Spin- and orbital-charge conversion at the surface states of Bi1-xSbx topological insulator", Proc. SPIE PC13119, Spintronics XVII, PC131191Y (4 October 2024); https://doi.org/10.1117/12.3028486
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KEYWORDS
Quantum conversion
Quantum experiments
Quantum devices
Quantum efficiency
Quantum signals
Quantum spin
Spectroscopy
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