Effect of Ge-composition on the frequency response of a Si/Si1?yGey P-i-N photodetector

Mukul K. Das; N. R. Das

doi:10.1117/1.2403869

1 December 2006 Effect of Ge-composition on the frequency response of a Si/Si_1-yGe_y P-i-N photodetector

Mukul K. Das, N. R. Das

Author Affiliations +

Optical Engineering, Vol. 45, Issue 12, 124001 (December 2006). https://doi.org/10.1117/1.2403869

Abstract

The effect of Ge-composition on the transit-time limited frequency response of a vertical Si/Si_1-yGe_y P-i-N photodetector has been investigated. The change in Ge-content (y) causes the changes in properties of the SiGe layer and the Si/SiGe interfaces and, hence, affects the transit time of carriers in the Si/SiGe photodetector. The results obtained from the analysis show that at low bias, the bandwidth of the photodetector initially increases with increase in Ge-content, but after an optimum value of Ge-content, the bandwidth starts decreasing. This optimum value increases with increase in applied bias.

©(2006) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Mukul K. Das and N. R. Das "Effect of Ge-composition on the frequency response of a Si/Si_1-yGe_y P-i-N photodetector," Optical Engineering 45(12), 124001 (1 December 2006). https://doi.org/10.1117/1.2403869

Published: 1 December 2006

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