Estimation of the composition of Si1-x-yGexCy layers on Si for photodetection at 1.3 and 1.55  µm

Bratati Mukhopadhyay; Sumitra Ghosh; P. K. Basu

doi:10.1117/1.2431347

1 January 2007 Estimation of the composition of Si_1-x-yGe_xC_ylayers on Si for photodetection at 1.3 and 1.55 μm

Bratati Mukhopadhyay, Sumitra Ghosh, P. K. Basu

Author Affiliations +

Optical Engineering, Vol. 46, Issue 1, 014001 (January 2007). https://doi.org/10.1117/1.2431347

Abstract

We explore the possibility of using ternary Si_1-x-yGe_xC_y grown on Si as the material for detection of infrared light of wavelengths 1.3 µm and 1.55 μm. By using an empirical expression for the absorption coefficient α, it is ensured that the ternary alloy exhibits values of α as high as 5000 cm^-1 at these wavelengths. From the corresponding values of the band gap, the compositions of the alloy are then ascertained by using an existing theory of band gap and band offset of ternary SiGeC alloy grown on (001) oriented Si. The estimated compositions are displayed as plots of x versus y ( ≤0.03) with different values of α as parameters.

©(2007) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Bratati Mukhopadhyay, Sumitra Ghosh, and P. K. Basu "Estimation of the composition of Si_1-x-yGe_xC_ylayers on Si for photodetection at 1.3 and 1.55 μm," Optical Engineering 46(1), 014001 (1 January 2007). https://doi.org/10.1117/1.2431347

Published: 1 January 2007

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