12 January 2021 Bulk and surface terahertz conductivity of Bi2xSbxTe3ySey topological insulators
Kirill Kuznetsov, Petr Kuznetsov, Alexander Frolov, Sergey Kovalev, Igor Ilyakov, Alexander Ezhov, Galiya Kitaeva
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Abstract

Complex conductivity of the topological insulator (TI) Bi2  −  xSbxTe3  −  ySey samples of various thicknesses and chemical compositions is studied by terahertz time-domain spectroscopy method in the range 0.5 to 2.5 THz. For the first time, a decrease in conductivity in the terahertz range has been observed as the chemical composition approaches the Ren’s curve. The generalized approximate expressions are obtained for complex conductivity with account of the lowest Eu1-phonon mode. Calculations of the Fermi energy and concentration of bulk carriers are performed. Based on the experimental data, an estimate of conductance of the topological states is obtained. The results can be useful in developing terahertz devices based on the specific surface transport in TIs.

© 2021 Society of Photo-Optical Instrumentation Engineers (SPIE) 0091-3286/2021/$28.00 © 2021 SPIE
Kirill Kuznetsov, Petr Kuznetsov, Alexander Frolov, Sergey Kovalev, Igor Ilyakov, Alexander Ezhov, and Galiya Kitaeva "Bulk and surface terahertz conductivity of Bi2xSbxTe3ySey topological insulators," Optical Engineering 60(8), 082012 (12 January 2021). https://doi.org/10.1117/1.OE.60.8.082012
Received: 31 October 2020; Accepted: 22 December 2020; Published: 12 January 2021
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Cited by 4 scholarly publications.
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KEYWORDS
Bismuth

Selenium

Terahertz radiation

Tellurium

Dielectrics

Antimony

Terahertz spectroscopy

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