This paper presents results of AC measurements of resistance Rp, phase angle θ, capacity Cp and loss tangent tgδ in dependences on frequency and temperature for InSb-SiO2/Si nanocomposite, immediately after preparation and annealed at 1273 K. The material was obtained by the In+ and Sb+ ions implantation into a SiO2 thin layer. Using obtained parameters frequency dependence of conductivity σ, real and imaginary components of permittivity were determined. This work refers to the hopping mechanism of conductivity and relaxation mechanisms of prepared material.
In this paper results of AC measurements of phase angle θ, capacity Cp and loss tangent tgδ dependences on frequency and temperature for InSb-SiO2 nanocomposite, immediately after preparation are presented. The material was obtained by the implantation of In+ and Sb+ ions into a thin layer of SiO2. Based on mathematical and physical calculations, frequency dependence of conductivity σ and relative permittivity εr were determined. Activation energy of electrons was also calculated. This work refers to the hopping mechanism of conductivity.
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