GaN and related materials span one of the largest ranges of band gap energies of any III-V alloy system, from the mid-infrared to deep ultraviolet. In addition, its asymmetric crystal polarity creates regions of negative dielectric constant in the deep infrared. This talk will describe our work in combining this band gap flexibility with precise dimensional and positional control of 3D nanostructures via selective epitaxy in plasma-assisted molecular beam epitaxy. Applications range from microLEDs to optical interconnects to metamaterials.
GaN nanowire LEDs with radial p-i-n junctions were grown by molecular beam epitaxy using N-polar selective area growth on Si(111) substrates. The N-polar selective area growth process facilitated the growth of isolated and highaspect-ratio n-type NW cores that were not subject to self-shadowing effects during the subsequent growth of a conformal low-temperature Mg:GaN shell. LED devices were fabricated from single-NW and multiple-NW arrays in their as-grown configuration by contacting the n-type core through an underlying conductive GaN layer and the p-type NW shell via a metallization layer. The NW LEDs exhibited rectifying I-V characteristics with a sharp turn-on voltage near the GaN bandgap and low reverse bias leakage current. Under forward bias, the NW LEDs produced electroluminescence with a peak emission wavelength near 380 nm and exhibited a small spectral blueshift with increasing current injection, both of which are consistent with electron recombination in the p-type shell layer through donor-acceptor-pair recombination. These core-shell NW devices demonstrate N-polar selective area growth as an effective technique for producing on-chip nanoscale light sources.
Hybrid glass parts composed of dissimilar glass sections are an attractive route to integrate multiple functions onto a single substrate and offer the potential to fabricate advanced laser sources, amplifiers, lossless splitters and other photonic devices such as Fabry-Perot etalons. We review the most promising bonding technologies, placing particular emphasis on techniques that do not require the use of high processing temperatures. In particular, we discuss in detail a recently developed low temperature bonding technology that relies on inorganic adhesives. Characterization of interfacial joints prepared with this inorganic technology indicate low insertion loss, high mechanical strength and chemical resistance to attack during the conventional lithographic and ion exchange steps employed to fabricate waveguide structures.
Phosphate glasses have become increasingly popular for planar waveguide devices owing in part to the development of a number of different commercial compositions with a wide range of optical, physical, chemical and laser properties. In addition, the recent development of low temperature bonding technology has made possible the fabrication of structures involving multiple glasses prepared as a single hybrid substrate. Combined, these new materials and technologies make possible the creation of devices with increasing integration and complexity. Here, we present passive characterization data collected on glass joints prepared with the low temperature bonding technology and active performance data of a hybrid DBR laser where the surface relief grating has been fabricated in the passive glass region of a hybrid substrate.
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