Dr. Alfred Forchel Profile

Dr. Alfred Forchel

Executive Director at Sensalight Technologies GmbH

SPIE Involvement:

Author

Publications (66)

Proceedings Article | 13 November 2014 Paper

Paper

Exciton-polariton laser diodes

M. Amthor, J. Fischer, I. G. Savenko, I. Shelykh, A. Chernenko, A. Rahimi-Iman, V. Kulakovskii, S. Reitzenstein, N. Y. Kim, M. Durnev, A. V. Kavokin, Y. Yamamoto, A. Forchel, M. Kamp, C. Schneider, S. Höfling

Proceedings Volume 9277, 92770Q (2014) https://doi.org/10.1117/12.2074122

KEYWORDS: Polaritons, Magnetism, Photons, Optical microcavities, Semiconductor lasers, Gallium arsenide, Quantum wells, Laser damage threshold, Polarization, Excitons

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Proceedings Article | 31 January 2014 Paper

Paper

Exciton-polariton lasers in Magnetic Fields

C. Schneider, J. Fischer, M. Amthor, S. Brodbeck, I. Savenko, I. Shelykh, A. Chernenko, A. Rahimi-Iman, V. Kulakovskii, S. Reitzenstein, N. Y. Kim, M. Durnev, A. Kavokin, Y. Yamamoto, A. Forchel, M. Kamp, S. Höfling

Proceedings Volume 8993, 899308 (2014) https://doi.org/10.1117/12.2038484

KEYWORDS: Polaritons, Magnetism, Photons, Optical microcavities, Polarization, Quantum wells, Gallium arsenide, Optical pumping, Excitons, Laser damage threshold

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Proceedings Article | 26 September 2013 Paper

Paper

Single spins in semiconductor quantum dot microcavities

Sven Höfling, Kristiaan De Greve, Peter McMahon, David Press, Leo Yu, Jason Pelc, Chandra Natarajan, Na Young Kim, Thaddeus Ladd, Eisuke Abe, Sebastian Maier, Dirk Bisping, Fabian Langer, Christian Schneider, Martin Kamp, Robert Hadfield, Alfred Forchel, M. Fejer, Yoshihisa Yamamoto

Proceedings Volume 8813, 88130F (2013) https://doi.org/10.1117/12.2025332

KEYWORDS: Quantum dots, Photons, Semiconductors, Optical microcavities, Ultrafast phenomena, Gallium arsenide, Quantum communications, Magnetism, Indium gallium arsenide, Polarization

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Proceedings Article | 29 March 2013 Paper

Paper

Ultrafast optical control of individual electron and hole spin qubits: entanglement between a single quantum dot electron spin and a downconverted 1560-nm single photon

Kristiaan De Greve, Peter McMahon, Leo Yu, Jason Pelc, Chandra Natarajan, David Press, Na Young Kim, Eisuke Abe, Dirk Bisping, Sebastian Maier, Christian Schneider, Martin Kamp, Sven Höfling, Robert Hadfield, Alfred Forchel, M. Fejer, Yoshihisa Yamamoto

Proceedings Volume 8635, 86350B (2013) https://doi.org/10.1117/12.2001931

KEYWORDS: Picosecond phenomena, Quantum dots, Polarization, Quantum communications, Single photon, Ultrafast phenomena, Waveguides, Frequency conversion, Visibility, Optical pumping

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Proceedings Article | 14 March 2013 Paper

Paper

Bloch-wave engineered submicron-diameter quantum-dot micropillars for cavity QED experiments

Niels Gregersen, Matthias Lermer, Stephan Reitzenstein, Sven Höfling, Jesper Mørk, Lukas Worschech, Martin Kamp, Alfred Forchel

Proceedings Volume 8619, 86190X (2013) https://doi.org/10.1117/12.2004137

KEYWORDS: Visibility, Scattering, Mirrors, Oscillators, Optical microcavities, Photonics, Light scattering, Gallium arsenide, Semiconductors, Quantum electrodynamics

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Proceedings Article | 4 February 2013 Paper

Paper

Recent advances in GaSb-based structures for mid-infrared emitting lasers: spectroscopic study

Grzegorz Sęk, Marcin Motyka, Filip Janiak, Krzysztof Ryczko, Jan Misiewicz, Adam Bauer, Matthias Dallner, Robert Weih, Sven Höfling, Alfred Forchel, Sofiane Belahsene, Guilhem Boissier, Yves Rouillard

Proceedings Volume 8631, 86312O (2013) https://doi.org/10.1117/12.2016699

KEYWORDS: Quantum wells, Indium arsenide, Quantum cascade lasers, Semiconductor lasers, Electrons, Mid-IR, Oscillators, Laser spectroscopy, Gallium antimonide, Luminescence

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Proceedings Article | 4 February 2013 Paper

Paper

Low threshold interband cascade lasers

S. Höfling, R. Weih, A. Bauer, A. Forchel, M. Kamp

Proceedings Volume 8631, 86311P (2013) https://doi.org/10.1117/12.2004680

KEYWORDS: Doping, Quantum cascade lasers, Indium arsenide, Semiconductor lasers, Gallium antimonide, Laser damage threshold, Semiconducting wafers, Quantum wells, Continuous wave operation, Cladding

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Proceedings Article | 24 October 2012 Paper

Paper

Characterization of GaAs/AlGaAs resonant tunneling diodes with a GaInNAs absorption layer as 1.3 μm photo sensors

F. Hartmann, F. Langer, D. Bisping, A. Musterer, S. Höfling, M. Kamp, A. Forchel, L. Worschech

Proceedings Volume 8511, 85110G (2012) https://doi.org/10.1117/12.931118

KEYWORDS: Gallium arsenide, Absorption, Diodes, Sensors, Applied physics, Molecular beam epitaxy, Gold, Telecommunications, Scattering, Avalanche photodetectors

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Proceedings Article | 24 October 2012 Paper

Paper

Interband cascade lasers for sensing operating in continuous wave mode at room temperature

S. Höfling, R. Weih, A. Bauer, M. Kamp, A. Forchel

Proceedings Volume 8511, 85110F (2012) https://doi.org/10.1117/12.931119

KEYWORDS: Quantum cascade lasers, Quantum wells, Indium arsenide, Cladding, Continuous wave operation, Gallium antimonide, Semiconductor lasers, Waveguides, Laser damage threshold, Doping

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Proceedings Article | 15 May 2012 Paper

Paper

Room temperature continuous wave interband cascade lasers for gas sensing

S. Höfling, R. Weih, A. Bauer, M. Kamp, A. Forchel

Proceedings Volume 8432, 84320N (2012) https://doi.org/10.1117/12.922210

KEYWORDS: Quantum cascade lasers, Quantum wells, Cladding, Semiconductor lasers, Indium arsenide, Continuous wave operation, Waveguide lasers, Gallium antimonide, Refractive index, Laser damage threshold

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Proceedings Article | 15 May 2012 Paper

Paper

Quantum dot microlasers with external feedback: a chaotic system close to the quantum limit

Ferdinand Albert, Caspar Hopfmann, Christian Schneider, Sven Höfling, Lukas Worschech, Martin Kamp, Wolfgang Kinzel, Alfred Forchel, Stephan Reitzenstein, Ido Kanter

Proceedings Volume 8432, 84320G (2012) https://doi.org/10.1117/12.921783

KEYWORDS: Quantum dots, Semiconductor lasers, Optical microcavities, Quantum physics, Complex systems, Michelson interferometers, Quantum efficiency, Physics, Quantum electrodynamics, Coherence (optics)

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Proceedings Article | 23 February 2012 Paper

Paper

Single photon sources for quantum information applications

S. Höfling, C. Schneider, T. Heindel, M. Lermer, T. Hoang, J. Beetz, T. Braun, L. Balet, N. Chauvin, L. Li, S. Reitzenstein, A. Fiore, M. Kamp, A. Forchel

Proceedings Volume 8271, 82710D (2012) https://doi.org/10.1117/12.912969

KEYWORDS: Single photon, Photonic crystals, Waveguides, Quantum dots, Quantum information, Quantum efficiency, Semiconductors, Gallium arsenide, Quantum information processing, Quantum key distribution

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Proceedings Article | 21 February 2012 Paper

Paper

Relaxation dynamics of optically imprinted polariton wires

Franziska Veit, Marc Aßmann, Manfred Bayer, Andreas Löffler, Sven Höfling, Alfred Forchel

Proceedings Volume 8260, 82600O (2012) https://doi.org/10.1117/12.906367

KEYWORDS: Polaritons, Beam shaping, Picosecond phenomena, Spatial light modulators, Diffractive optical elements, Quantum wells, Optical microcavities, Fourier transforms, Diffraction, Photon polarization

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Proceedings Article | 17 September 2011 Paper

Paper

Near-infrared semiconductor-nanostructured light detectors

S. Höfling, S. Göpfert, F. Hartmann, C. Schneider, D. Bisping, D. Press, M. Kamp, L. Worschech, A. Forchel

Proceedings Volume 8154, 81540G (2011) https://doi.org/10.1117/12.896424

KEYWORDS: Electrons, Transistors, Gallium arsenide, Absorption, Indium arsenide, Quantum dots, Telecommunications, Sensors, Heterojunctions, Diodes

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Proceedings Article | 1 March 2011 Paper

Paper

Cavity quantum electrodynamics studies with site-controlled InGaAs quantum dots integrated into high quality microcavities

S. Reitzenstein, C. Schneider, F. Albert, A. Huggenberger, T. Heindel, M. Lermer, S. Stobbe, P. Weinmann, P. Lodahl, S. Höfling, M. Kamp, L. Worschech, A. Forchel

Proceedings Volume 7947, 794702 (2011) https://doi.org/10.1117/12.876794

KEYWORDS: Quantum efficiency, Indium arsenide, Gallium arsenide, Single photon, Etching, Quantum dots, Optical microcavities, Scanning electron microscopy, Interfaces, Wet etching

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Proceedings Article | 12 February 2011 Paper

Paper

Nuclear feedback in a single electron-charged quantum dot under pulsed optical control

Thaddeus Ladd, David Press, Kristiaan De Greve, Peter McMahon, Benedikt Friess, Christian Schneider, Martin Kamp, Sven Höfling, Alfred Forchel, Yoshihisa Yamamoto

Proceedings Volume 7948, 79480U (2011) https://doi.org/10.1117/12.873978

KEYWORDS: Polarization, Optical pumping, Diffusion, Quantum dots, Mathematical modeling, Ultrafast phenomena, Magnetism, Picosecond phenomena, Data modeling, Pulsed laser operation

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Proceedings Article | 24 January 2011 Paper

Paper

Acetylene measurement using quantum cascade lasers at 14μm

J. Herbst, B. Scherer, F. Singer, J. Erb, A. Lambrecht, C. Rathke, S. Filip, J. Kappler, P. Fuchs, J. Koeth, J. Friedl, T. W. Schlereth, J. Semmel, S. Höfling, L. Worschech, A. Forchel

Proceedings Volume 7945, 79450J (2011) https://doi.org/10.1117/12.873765

KEYWORDS: Quantum cascade lasers, Absorption, Sensors, Spectroscopy, Laser spectroscopy, Fabry–Perot interferometers, Gases, Pulsed laser operation, Spectral resolution, Calibration

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Proceedings Article | 24 January 2011 Paper

Paper

DFB lasers for sensing applications in the 3.0-3.5 um wavelength range

Marc Fischer, Michael von Edlinger, Lars Nähle, Johannes Koeth, Adam Bauer, M. Dallner, Sven Höfling, Lukas Worschech, Alfred Forchel, Sofiane Belahsene, Yves Rouillard

Proceedings Volume 7945, 79450E (2011) https://doi.org/10.1117/12.871411

KEYWORDS: Quantum cascade lasers, Laser applications, Quantum wells, Continuous wave operation, Semiconductor lasers, Gallium antimonide, Molecular beam epitaxy, Reactive ion etching, Etching, Waveguides

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SPIE Journal Paper | 1 November 2010

Shortened injector interband cascade lasers for 3.3- to 3.6-µm emission

Adam Bauer, Matthias Dallner, Martin Kamp, Sven Höfling, Lukas Worschech, Alfred Forchel

OE, Vol. 49, Issue 11, 111117, (November 2010) https://doi.org/10.1117/12.10.1117/1.3505831

KEYWORDS: Quantum cascade lasers, Indium arsenide, Antimony, Quantum wells, Active optics, Pulsed laser operation, Stereolithography, Indium, Gallium, Gallium antimonide

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Proceedings Article | 20 September 2010 Paper

Paper

cQED enhanced light detection and emission in electrically contacted quantum dot micropillars

S. Reitzenstein, C. Kistner, T. Heindel, C. Schneider, M. Lermer, T. Braun, S. Höfling, L. Worschech, A. Forchel

Proceedings Volume 7808, 78080E (2010) https://doi.org/10.1117/12.861405

KEYWORDS: Single photon, Optical microcavities, Quantum dots, Sensors, Light, Quantum efficiency, Excitons, Semiconductors, Near infrared, Gallium arsenide

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Proceedings Article | 2 March 2010 Paper

Paper

Up on the Jaynes-Cummings ladder of an exciton-cavity system

J. Kasprzak, S. Reitzenstein, E. Muljarov, C. Kistner, C. Schneider, M. Strauss, S. Höfling, A. Forchel, W. Langbein

Proceedings Volume 7600, 760015 (2010) https://doi.org/10.1117/12.838372

KEYWORDS: Semiconductors, Ultrafast phenomena, Semiconductor materials, Nanostructure materials, Current controlled current source, Superposition, Polaritons, Solid state electronics, Optical microcavities, Physics

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Proceedings Article | 15 February 2010 Paper

Paper

Experimental approach to ultrafast optical spin echo of a single quantum dot electron spin

Kristiaan De Greve, David Press, Thaddeus Ladd, Benedikt Friess, Peter McMahon, Christian Schneider, Martin Kamp, Sven Hoefling, Alfred Forchel, Yoshihisa Yamamoto

Proceedings Volume 7611, 76110K (2010) https://doi.org/10.1117/12.843667

KEYWORDS: Quantum dots, Quantum communications, Ultrafast phenomena, Magnetism, Optical pumping, Pulsed laser operation, Gallium arsenide, Coherence (optics), Microwave radiation

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Proceedings Article | 23 January 2010 Paper

Paper

Semiconductor quantum light emitters and sensors

S. Höfling, T. Heindel, C. Kistner, C. Schneider, M. Lermer, S. Reitzenstein, M. Kamp, A. Forchel

Proceedings Volume 7608, 760804 (2010) https://doi.org/10.1117/12.846856

KEYWORDS: Single photon, Semiconductors, Surface plasmons, Sensors, Absorption, Photodetectors, Optical sensors, Quantum dots, Optical microcavities, Gallium arsenide

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Proceedings Article | 3 December 2009 Paper

Paper

Quantum dot micropillar lasers

S. Reitzenstein, C. Kistner, S. Münch, T. Heindel, C. Schneider, M. Strauß, A. Rahimi-Iman, K. Morgener, S. Höfling, M. Kamp, A. Forchel

Proceedings Volume 7631, 76311J (2009) https://doi.org/10.1117/12.855654

KEYWORDS: Laser damage threshold, Quantum dots, Photons, Optical microcavities, Optical pumping, Laser optics, Semiconductor lasers, Modes of laser operation, Gallium arsenide, Scanning electron microscopy

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Proceedings Article | 3 February 2009 Paper

Paper

Bulk temperature mapping of broad area quantum dot lasers: modeling and micro-thermographic analysis

Jayanta Mukherjee, Mathias Ziegler, Julien LeClech, Jens Tomm, Brian Corbett, John McInerney, Johann Peter Reithmaier, S. Deubert, A. Forchel

Proceedings Volume 7230, 72300W (2009) https://doi.org/10.1117/12.808298

KEYWORDS: Thermal modeling, Finite element methods, Quantum dot lasers, Semiconductor lasers, Instrument modeling, Temperature metrology, Spatial resolution, Thermography, High power lasers, Cameras

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Proceedings Article | 26 January 2009 Paper

Paper

Engineered quantum dot structures: fabrication and applications

Johann Peter Reithmaier, Emil-Mihai Pavelescu, Christian Gilfert, A. Gushterov, Wolfgang Kaiser, Pia Weinmann, Martin Kamp, Alfred Forchel, Alfredo Martín-Mínguez, Ignacio Esquivias

Proceedings Volume 7222, 72220R (2009) https://doi.org/10.1117/12.815359

KEYWORDS: Quantum dots, Quantum wells, Laser stabilization, Laser applications, Laser development, High power lasers, Fiber lasers, Atomic force microscopy, Gallium arsenide, Temperature metrology

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Proceedings Article | 16 April 2008 Paper

Paper

2 watt 2 µm Tm/Ho fiber laser system passively Q-switched by antimonide semiconductor saturable absorber

Samuli Kivistö, Tommi Hakulinen, Mircea Guina, Karl Rößner, Alfred Forchel, Oleg Okhotnikov

Proceedings Volume 6998, 69980Q (2008) https://doi.org/10.1117/12.780487

KEYWORDS: Oscillators, Fiber lasers, Q switches, Semiconductors, Q switched lasers, Pulsed laser operation, Fiber amplifiers, Optical amplifiers, Reflectivity, Mirrors

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Proceedings Article | 29 January 2008 Paper

Paper

High brightness quantum well and quantum dot tapered lasers

N. Michel, M. Krakowski, I. Hassiaoui, M. Calligaro, M. Lecomte, O. Parillaud, P. Weinmann, C. Zimmermann, W. Kaiser, M. Kamp, A. Forchel, E.-M. Pavelescu, J.-P. Reithmaier, B. Sumpf, G. Erbert, M. Kelemen, R. Ostendorf, J-M. García-Tijero, H. Odriozola, I. Esquivias

Proceedings Volume 6909, 690918 (2008) https://doi.org/10.1117/12.787115

KEYWORDS: Continuous wave operation, Quantum dots, Quantum wells, Pulsed laser operation, Laser stabilization, Waveguides, High power lasers, Quantum efficiency, Semiconductor lasers, Laser applications

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Proceedings Article | 5 June 2007 Paper

Paper

Strong coupling of single quantum dots to micropillars

S. Götzinger, D. Press, S. Reitzenstein, K. Hofmann, A. Löffler, M. Kamp, A. Forchel, Y. Yamamoto

Proceedings Volume 6593, 65932E (2007) https://doi.org/10.1117/12.726311

KEYWORDS: Quantum dots, Quantum efficiency, Luminescence, Excitons, Picosecond phenomena, Semiconductors, Quantum information, Optical microcavities, Quantum information processing, Nanostructures

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Proceedings Article | 14 February 2007 Paper

Paper

Nanophotonic integrated lasers

M. Kamp, H. Scherer, K. Janiak, H. Heidrich, R. Brenot, G.H. Duan, H. Benisty, A. Forchel

Proceedings Volume 6475, 64750Z (2007) https://doi.org/10.1117/12.704965

KEYWORDS: Waveguides, Photodiodes, Tunable lasers, Mirrors, Photonic crystals, Diodes, Dispersion, Semiconductor lasers, Scanning electron microscopy, Image segmentation

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Proceedings Article | 7 February 2007 Paper

Paper

Efficient energy transfer in InAs quantum dash based tunnel-injection structures at low temperatures

G. Sęk, P. Podemski, R. Kudrawiec, J. Misiewicz, A. Somers, S. Hein, S. Höfling, J. P. Reithmaier, A. Forchel

Proceedings Volume 6481, 64810F (2007) https://doi.org/10.1117/12.713616

KEYWORDS: Quantum wells, Gallium, Energy transfer, Indium arsenide, Aluminum, Luminescence, Quantum efficiency, Temperature metrology, Telecommunications, Quantum dots

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Proceedings Article | 3 October 2006 Paper

Paper

High power and very low noise operation at 1.3 and 1.5 um with quantum dot and quantum dash Fabry-Perot lasers for microwave links

Patrick Resneau, Michel Calligaro, Michel Krakowski, Huiyun Liu, Mark Hopkinson, André Somers, A. Forchel, Johann Peter Reithmaier

Proceedings Volume 6399, 63990K (2006) https://doi.org/10.1117/12.689797

KEYWORDS: Microwave radiation, Quantum dot lasers, Quantum wells, Quantum dots, Gallium arsenide, Laser damage threshold, High power lasers, Laser applications, Fabry–Perot interferometers, Waveguides

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Proceedings Article | 2 March 2006 Paper

Paper

Photonic crystal waveguide-based dispersion compensators

M. Kamp, J. Zimmermann, S. Anand, R. März, A. W. Forchel

Proceedings Volume 6123, 61230Y (2006) https://doi.org/10.1117/12.646172

KEYWORDS: Waveguides, Dispersion, Resonators, Mirrors, Photonic crystals, Etching, Phase shifts, Modulation, Network security, Picosecond phenomena

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Proceedings Article | 28 February 2006 Paper

Paper

Strong coupling in a single quantum dot semiconductor microcavity system

S. Reitzenstein, G. Sęk, A. Löffler, C. Hofmann, S. Kuhn, J. P. Reithmaier, L. V. Keldysh, V. D. Kulakovskii, T. L. Reinecke, A. Forchel

Proceedings Volume 6115, 61151M (2006) https://doi.org/10.1117/12.661393

KEYWORDS: Quantum dots, Excitons, Mirrors, Optical microcavities, Semiconductors, Gallium, Oscillators, Gallium arsenide, Quantum electrodynamics, Distributed Bragg reflectors

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Proceedings Article | 7 November 2005 Paper

Paper

Ultra-low-noise over wide-bandwidth of 1.55 µm InP-based quantum-dash Fabry-Perot lasers for microwave systems

Patrick Resneau, Michel Calligaro, Shailendra Bansropun, Olivier Parillaud, Michel Krakowski, Ruth Schwertberger, André Somers, Johann Peter Reithmaier, Alfred Forchel

Proceedings Volume 5989, 59890X (2005) https://doi.org/10.1117/12.660079

KEYWORDS: Microwave radiation, Quantum wells, Fabry–Perot interferometers, Laser applications, Reliability, Laser development, Quantum dots, Modulation, Laser systems engineering, Waveguides

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Proceedings Article | 25 October 2005 Paper

Paper

Gain and noise properties of InAs/InP quantum dash semiconductor optical amplifiers

A. Bilenca, D. Hadass, R. Alizon, H. Dery, V. Mikhelashvili, G. Eisenstein, A. Somers, W. Kaiser, S. Deubert, J. Reithmaier, A. Forchel, M. Calligaro, S. Bansropun, M. Krakowski

Proceedings Volume 6014, 601404 (2005) https://doi.org/10.1117/12.631523

KEYWORDS: Optical amplifiers, Quantum wells, Picosecond phenomena, Indium arsenide, Modulation, Semiconductor optical amplifiers, Waveguides, Interference (communication), Quantum dots

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Proceedings Article | 12 October 2005 Paper

Paper

System performance of a modern hollow-core optical fiber coupled to a quantum cascade laser: transmission efficiency and relative intensity noise

Tobias Gensty, Jens von Staden, Wolfgang Elsäßer, Sven Höfling, Johann Reithmaier, Alfred Forchel

Proceedings Volume 5958, 595804 (2005) https://doi.org/10.1117/12.622264

KEYWORDS: Optical fibers, Quantum cascade lasers, Pulsed laser operation, Signal detection, Spectroscopy, Mirrors, Mid-IR, Semiconductor lasers, Quantum efficiency, Photons

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Proceedings Article | 1 April 2005 Paper

Paper

980-nm small-aperture tapered laser (1W CW, M2~3) and tapered arrays (>3W CW): comparison between GaInAs/(Al)GaAs quantum dot and quantum well structures

Nicolas Michel, Michel Calligaro, Michel Krakowski, Stefan Deubert, Johann-Peter Reithmaier, Alfred Forchel

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.590463

KEYWORDS: Quantum wells, Quantum dots, Continuous wave operation, Laser vision correction, Quantum efficiency, Quantum dot lasers, Laser development, External quantum efficiency, Laser damage threshold, Laser stabilization

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Proceedings Article | 1 April 2005 Paper

Paper

Dynamical properties of quantum dash lasers

Gadi Eisenstein, Hanan Dery, D. Hadass, Robert Alizon, Andre Somers, Stefan Deubert, Wolfgang Kaiser, Johann-Peter Reithmaier, Alfred Forchel, Michel Calligaro, Shailendra Bansropun, Michel Krakowski

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.597132

KEYWORDS: Modulation, Electrons, Scattering, Semiconductor lasers, Plasma, Quantum dot lasers, Quantum dots, Picosecond phenomena, Polarization, Nanolithography

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Proceedings Article | 25 March 2005 Paper

Paper

Low-loss InP-based photonic crystal waveguides and resonators

Martin Kamp, Joerg Zimmermann, Reinhard Maerz, Srinivasan Anand, Alfred Forchel

Proceedings Volume 5729, (2005) https://doi.org/10.1117/12.590770

KEYWORDS: Waveguides, Resonators, Dispersion, Polarization, Mirrors, Photonic crystals, Heterojunctions, Light wave propagation, Phase shifts, Waveguide modes

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Proceedings Article | 25 October 2004 Paper

Paper

High-contrast planar photonic crystals

Reinhard Marz, Sven Burger, Alfred Forchel, Helmut Heidrich, Ortwin Hess, Dirk Michaelis, Klaus Wandel, Ralph Wehrspohn

Proceedings Volume 5597, (2004) https://doi.org/10.1117/12.580070

KEYWORDS: Photonic crystals, Nanophotonics, Waveguides, Optical networks, Instrument modeling, Systems modeling, Etching, Optimization (mathematics), Dispersion, Fiber lasers

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Proceedings Article | 25 October 2004 Paper

Paper

Technology and properties of photonic-crystal-based active and passive optoelectronic devices

Martin Kamp, Sven Mahnkopf, Alfred Forchel, Guang-Hua Duan, Srinivasan Anand

Proceedings Volume 5597, (2004) https://doi.org/10.1117/12.580078

KEYWORDS: Waveguides, Photonic crystals, Tunable lasers, Optoelectronic devices, Mirrors, Photomicroscopy, Semiconductor lasers, Refractive index, Electrons, Waveguide lasers

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Proceedings Article | 1 September 2004 Paper

Paper

High-brightness (1 W with M²=2.9) GaInAs/(Al)GaAs index-guided quantum-dot tapered lasers at 980 nm with a high-wavelength stability

Sophie-Charlotte Auzanneau, Nicolas Michel, Michel Calligaro, Michel Krakowski, Stefan Deubert, Johann Peter Reithmaier, Alfred Forchel

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.544642

KEYWORDS: Quantum wells, Laser development, Quantum dots, High power lasers, Laser stabilization, Semiconductor lasers, Near field optics, Temperature metrology, Continuous wave operation

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Proceedings Article | 1 September 2004 Paper

Paper

High-power and low-noise 1.55 µm InP-based quantum dash lasers

Patrick Resneau, Michel Calligaro, Shailendra Bansropun, Olivier Parillaud, Michel Krakowski, Ruth Schwertberger, Andre Somers, Johann Peter Reithmaier, Alfred Forchel

Proceedings Volume 5452, (2004) https://doi.org/10.1117/12.544958

KEYWORDS: Quantum dots, Modulation, Fabry–Perot interferometers, Semiconductor lasers, Continuous wave operation, Quantum wells, High power lasers, Dense wavelength division multiplexing, Waveguides, Indium arsenide

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Proceedings Article | 9 July 2004 Paper

Paper

Integration of active and passive photonic-crystal-based optoelectronic components

Sven Mahnkopf, Martin Kamp, Reinhard Marz, Guang-Hua Duan, Veronique Colson, Alfred Forchel

Proceedings Volume 5360, (2004) https://doi.org/10.1117/12.528308

KEYWORDS: Photonic crystals, Waveguides, Tunable lasers, Diodes, Resonators, Reflectivity, Channel waveguides, Mirrors, Wavelength division multiplexing, Image segmentation

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Proceedings Article | 9 July 2004 Paper

Paper

Low-loss photonic crystal and monolithic InP integration: bands, bends, lasers, and filters

Henri Benisty, Claude Weisbuch, Segolene Olivier, Romuald Houdre, Rolando Ferrini, D. Leuenberger, Barbara Wild, Benoit Lombardet, Min Qiu, Srinivasan Anand, Mikael Mulot, Anders Karlsson, Marcin Swillo, B. Jazkorzynska, M. Agio, Maria Kafesaki, Costas Soukoulis, A. Talneau, Martin Kamp, Alfred Forchel, Juergen Moosburger, Thomas Happ, Guang-Hua Duan, C. Cuisin, J.-P. Chandouineau, O. Drisse, F. Gaborit, L. Legouezigou, O. Legouezigou, F. Lelarge, Francis Poingt, F. Pommereau, Bruno Thedrez

Proceedings Volume 5360, (2004) https://doi.org/10.1117/12.538486

KEYWORDS: Waveguides, Photonic crystals, Optical filters, Mirrors, Etching, Heterojunctions, Finite-difference time-domain method, Wavelength division multiplexing, Photomicroscopy, Photonic integrated circuits

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Proceedings Article | 14 June 2004 Paper

Paper

Lasers and amplifiers based on quantum-dot-like gain material

Johann Peter Reithmaier, Stefan Deubert, Roland Krebs, Frank Klopf, Ruth Schwertberger, Andre Somers, Lars Bach, Wolfgang Kaiser, Alfred Forchel, Robert Alizon, D. Hadass, Alberto Bilenca, Hanan Dery, B. Mikhelashvili, Gadi Eisenstein, Michel Calligaro, Shailendra Bansropun, Michel Krakowski

Proceedings Volume 5361, (2004) https://doi.org/10.1117/12.531543

KEYWORDS: Continuous wave operation, Laser damage threshold, Optical amplifiers, Quantum dots, Nanoparticles, Semiconductor lasers, Amplifiers, Laser development, Modulation, Waveguide lasers

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Semiconductor lasers and amplifiers were developed based on self-assembled quantum-dot gain material. This paper gives an overview about the recent work on GaAs- and InP-based quantum-dot devices mainly dedicated for telecom applications. The major advantage of quantum-dot like gain material, i.e. the possibility to tailor the spectral and spatial gain properties of an amplifying material, was used to optimize different device aspects, like low threshold current, broad band amplification or low temperature sensitivity. High performance GaAs-based continuous wave (cw) operating quantum-dot lasers could be fabricated with threshold currents of about 2 mA (L = 400 μm). Single mode emitting devices with emission wavelengths > 1.3 μm were realized by laterally coupled feedback gratings with threshold currents below 5 mA, output powers > 5 mW and cw operation temperatures up to 85 °C. Modulation frequencies of up to 7.5 GHz were obtained for standard device structures. For long wavelength telecom applications quantum-dot like material with dash geometry was developed on InP substrates with basic properties in the transition region between quantum-dot and -wire systems. A very large tuning range of the emission wavelength between 1.2 and 2.0 μm (room temperature) was obtained which allow the realization of material with ultra-wide gain bandwidth. Quantum-dash laser structures reaches threshold current densities < 1 kA/cm². Ridge waveguide lasers with a cavity length of 1.9 mm show cw threshold currents of about 100 mA and maximum output powers > 40 mW per facet. With 300 μm long facet coated devices cw threshold currents of 23 mA and maximum operation temperatures in pulsed mode of 130 °C were achieved. Semiconductor optical amplifiers were fabricated by using broad band quantum-dash material. For a 1.9 mm long device, up to 22 dB gain was obtained with a three times larger spectral range than in comparable quantum well devices. High speed nearly pattern free signal amplification up to 10 GBit/s could be demonstrated and wavelength conversion experiments were performed.

Proceedings Article | 11 May 2004 Paper

Paper

High-brightness GaInAs/(Al)GaAs quantum dot tapered lasers at 980 nm with a high wavelength stability

Sophie-Charlotte Auzanneau, Michel Calligaro, Michel Krakowski, Stefan Deubert, Johann Peter Reithmaier, Alfred Forchel

Proceedings Volume 5365, (2004) https://doi.org/10.1117/12.529060

KEYWORDS: Quantum dots, Semiconductor lasers, High power lasers, Temperature metrology, Laser development, Laser damage threshold, Near field, Quantum wells, Laser applications, Quantum dot lasers

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Proceedings Article | 11 June 2003 Paper

Paper

Entangled exciton states in quantum dot molecules

M. Bayer, G. Ortner, A. Larionov, A. Kress, Alfred Forchel, Pawel Hawrylak, K. Hinzer, M. Korkusinski, Simon Fafard, Zbigniew Wasilewski, Thomas Reinecke, Yu. Lyanda-Geller

Proceedings Volume 5023, (2003) https://doi.org/10.1117/12.514621

KEYWORDS: Quantum dots, Molecules, Excitons, Gallium arsenide, Particles, Chemical species, Quantum communications, Quantum optics, Quantum information, Quantum computing

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Currently there is strong interest in realizing implementations of quantum computation and quantum cryptography in a solid state environment. One of the systems that are actively studied are semiconductor quantum dots (QDs). Due to their discrete energy level structure, they are often called artificial atoms, and they attract immediately interest of quantum information science since they allow to mimic the design developed for atomic physics systems such as ions in traps or atoms in cavities. However, despite of the similarities, one has to keep in main that any elementary excitation in a QD has a generic many-body character. An essential building block of a quantum processor is a quantum gate which entangles the states of two quantum bits. Recently it has been proposed that a pair of vertically aligned QDs could be used as an optically driven quantum gate: The quantum bits are individual carriers either on dot zero or dot one. The different dot indices play the same role as a "spin," therefore we term them "isospin." Quantum mechanical tunneling between the dots rotates the "isospin" and leads to superposition of two quantum dot states. The quantum gate is built when two different particles, an electron and a hole, are created optically. The two particles form entangled isospin states. The entanglement can be controlled by application of an electric field along the heterostructure growth direction. Here we present spectroscopic studies on single quantum dot molecules (QDMs) with different vertical separation between the dots that support the feasibility of this proposal. The comparison of the evolution of the excitonic recombination spectrum with the results of calculations allows us to demonstrate coherent tunneling of electrons and holes across the separating barrier and the formation of entangled exciton states. For a given barrier width, we find only small variations of the tunneling induced splitting between the entangled states demonstrating a good homogeneity within the obtained QDM ensembles.

Proceedings Article | 30 May 2003 Paper

Paper

Spin and polarization dynamics in magnetic and nonmagentic semiconductor quantum dots

Michael Schneiber, Jochen Seufert, Herbert Schoemig, Gerd Bacher, Alfred Forchel

Proceedings Volume 4992, (2003) https://doi.org/10.1117/12.475716

KEYWORDS: Magnetism, Polarization, Manganese, Excitons, Ions, Quantum dots, Polarons, Pulsed laser operation, Picosecond phenomena, Magnetic semiconductors

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Proceedings Article | 22 May 2002 Paper

Paper

980-nm quantum dot lasers for high-power applications

Frank Klopf, Stefan Deubert, Johann-Peter Reithmaier, Alfred Forchel, Philippe Collot, Michel Krakowski

Proceedings Volume 4651, (2002) https://doi.org/10.1117/12.467959

KEYWORDS: Quantum wells, Semiconductor lasers, Quantum dot lasers, Quantum dots, Internal quantum efficiency, Laser damage threshold, High power lasers, Laser stabilization, Temperature metrology, Continuous wave operation

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Proceedings Article | 9 July 2001 Paper

Paper

Photonic crystals for optoelectronic devices

Alfred Forchel, Martin Kamp, Johann-Peter Reithmaier, Juergen Moosburger, Thomas Happ, Siegfried Rennon, Frank Klopf, Ralph Werner, Ursula Oesterle, H. Benisty, Claude Weisbuch

Proceedings Volume 4283, (2001) https://doi.org/10.1117/12.432591

KEYWORDS: Waveguides, Photonic crystals, Mirrors, Etching, Quantum dots, Reflectivity, Electron beam lithography, Waveguide lasers, Photomasks, Optoelectronic devices

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Proceedings Article | 17 April 2001 Paper

Paper

Coupled In0.6Ga0.4As/GaAs quantum dots: a photoreflectance study

G. Sek, K. Ryczko, Jan Misiewicz, M. Bayer, Frank Klopf, Johann-Peter Reithmaier, Alfred Forchel

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425417

KEYWORDS: Quantum dots, Quantum computing, Gallium arsenide, Solar energy, Silicon, Spectroscopy, Molecules, Luminescence, Signal detection, Physics

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Proceedings Article | 17 April 2001 Paper

Paper

Excitons at the p-type modulation doped Al0.5Ga0.5As/GaAs interface

Leszek Bryja, K. Ryczko, M. Kubisa, Jan Misiewicz, O. Stern, M. Bayer, Alfred Forchel, C. Sorensen

Proceedings Volume 4413, (2001) https://doi.org/10.1117/12.425423

KEYWORDS: Excitons, Heterojunctions, Interfaces, Luminescence, Magnetism, Modulation, Gallium arsenide, Absorption, Physics, Quantization

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Proceedings Article | 8 March 2001 Paper

Paper

Spectral diffusion and fine structure splitting of optical transitions in semiconductor quantum dots

Gerd Bacher, Jochen Seufert, R. Weigand, M. Obert, Vladimir Kulakovskii, T. Kuemmell, Alfred Forchel, K. Leonardi, Detlef Hommel

Proceedings Volume 4318, (2001) https://doi.org/10.1117/12.417577

KEYWORDS: Excitons, Magnetism, Polarization, Quantum dots, Diffusion, Phonons, Switching, Semiconductors, Spatial resolution, Luminescence

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Proceedings Article | 15 December 2000 Paper

Paper

Single-dot spectroscopy of multiexcitons in AlInAs/AlGaAs quantum dots

Karin Hinzer, M. Bayer, O. Stern, A. Gorbunov, Alfred Forchel, Pawel Hawrylak, Jean Lapointe, Simon Fafard

Proceedings Volume 4087, (2000) https://doi.org/10.1117/12.406453

KEYWORDS: Excitons, Magnetism, Luminescence, Spectroscopy, Quantum dots, Chemical species, Indium arsenide, Gallium arsenide, Quantum communications, Nanostructures

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Proceedings Article | 14 July 2000 Paper

Paper

InGaAs quantum dots for high-performance lasers and single-dot spectroscopy

Alfred Forchel, Johann-Peter Reithmaier, F. Schaefer, Martin Kamp, M. Bayer

Proceedings Volume 3944, (2000) https://doi.org/10.1117/12.391489

KEYWORDS: Quantum dots, Excitons, Magnetism, Gallium arsenide, Spectroscopy, Luminescence, Laser applications, Waveguides, Temperature metrology, Laser damage threshold

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Proceedings Article | 15 December 1999 Paper

Paper

GaInAsSb/AlGaAsSb: single-mode DFB lasers for gas sensing in the 2-um wavelength range

Thomas Bleuel, M. Brockhaus, J. Koeth, J. Hofmann, Ralph Werner, Alfred Forchel

Proceedings Volume 3858, (1999) https://doi.org/10.1117/12.372907

KEYWORDS: Gas lasers, Metals, Pulsed laser operation, Refractive index, Etching, Laser damage threshold, Semiconductor lasers, Laser applications, Laser development, Quantum wells

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Proceedings Article | 18 November 1999 Paper

Paper

Development and characterization of an NMR microsensor for nanoliter sample volumes

Joern Dechow, Alfred Forchel, Titus Lanz, Axel Haase

Proceedings Volume 3857, (1999) https://doi.org/10.1117/12.370276

KEYWORDS: Liquids, Receivers, Glasses, Signal detection, Microsensors, Silicon, Signal to noise ratio, Capillaries, Gallium arsenide, Resistance

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Proceedings Article | 8 April 1999 Paper

Paper

Photoreflectance study of coupling effects in double quantum wells

G. Sek, K. Ryczko, M. Kubisa, Jan Misiewicz, J. Koeth, Alfred Forchel

Proceedings Volume 3725, (1999) https://doi.org/10.1117/12.344734

KEYWORDS: Quantum wells, Gallium arsenide, Molecular beam epitaxy, Semiconductors, Spectroscopy, Excitons, Spectroscopes, Heterojunctions, Modulation, Particles

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Proceedings Article | 4 December 1998 Paper

Paper

Lateral band gap engineering by focused ion beam implantation for optoelectronic devices

Johann-Peter Reithmaier, N. Mais, H. Koenig, Alfred Forchel

Proceedings Volume 3491, (1998) https://doi.org/10.1117/12.328730

KEYWORDS: Ion beams, Waveguides, Optoelectronic devices, Quantum wells, Ions, Modulators, Absorption, Optical lithography, Annealing, Sensors

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Proceedings Article | 23 April 1998 Paper

Paper

Coherent spectroscopy of semiconductor quantum wires

M. Bayer, W. Braun, T. Baars, Alfred Forchel, Thomas Reinecke, S. Walck, O. Schmitt, Ladislaus Banyai, Hartmut Haug

Proceedings Volume 3277, (1998) https://doi.org/10.1117/12.306145

KEYWORDS: Excitons, Scattering, Spectroscopy, Four wave mixing, Phonons, Semiconductors, Acoustics, Quantum wells, Absorption, Polarization

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Proceedings Article | 19 June 1995 Paper

Paper

Optoelectronic nanostructures: physics and technology

Heinz Schweizer, Uwe Griesinger, Volker Haerle, Frank Adler, Manfred Burkard, Frank Barth, Juergen Hommel, Christiane Kaden, Janos Kovac, Justus Kuhn, Bernd Klepser, Georg Lehr, Freek Prins, Ferdinand Scholz, Manfred Pilkuhn, Josef Straka, Alfred Forchel, Gilbert Smith

Proceedings Volume 2399, (1995) https://doi.org/10.1117/12.212517

KEYWORDS: Laser damage threshold, Etching, Photomasks, Nanostructures, Semiconductors, Laser resonators, Quantum efficiency, Resonators, Ions, Dry etching

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Nanostructures based on III-V semiconductor materials have reached a status which enables basic physical studies on size effects in device and in nanostructures. The expected benefits of high modulation bandwidth, low laser threshold, and improved linewidth enhancement factor in DFB lasers, to say only a few, which are believed to be based mainly on the changed density of states (DOS) function in low dimensions might be counterbalanced by altered carrier energy relaxation and k-space filling in those structures. To investigate systematically size effects and device aspects, a continuous change of structure and active device size is needed from 2D to 0D dimensions. This requirement can be met by high resolution electron beam lithography in conjunction with low damage etch processes and epitaxial overgrowth. In this presentation we discuss the technology and design considerations of lasers with low dimensional active regions as well as DOS effects and device relevant carrier relaxation effects. The technology part will focus especially on low damage etch processes such as RIE- ECR. Nearly damage free structuring processes can be demonstrated. Based on this low damage dry etch process we obtained electrically pumped wire DFB lasers with relatively high output power (up to 6 mW) and operation temperature (60 degrees C). Time resolved optical ps-spectroscopy as well as high excitation spectroscopy on wire and dot nanostructures demonstrate strongly changed k-space filling and carrier relaxation mechanisms in low dimensions and represent a serious limitation of device speed. Results obtained from electrically pumped wire DFB lasers confirm the carrier relaxation and k-space filling effects in device structures which have been observed by optical pump experiments in nanostructures. Despite the band filling effects in low dimensional structures, the wire DFB lasers show clearly the expected feature of gain coupling and enhanced differential gain which might demonstrate the applicability of mesoscopic laser devices in common data communication approaches.

Proceedings Article | 26 May 1994 Paper

Paper

Lateral confinement effects in the luminescence of ultranarrow InGaAs/InP quantum wires

Frank Kieseling, P. Ils, M. Michel, Alfred Forchel, I. Gyuro, M. Klenk, E. Zielinski

Proceedings Volume 2141, (1994) https://doi.org/10.1117/12.176855

KEYWORDS: Luminescence, Picosecond phenomena, Wet etching, Scanning electron microscopy, Quantization, Electron beam lithography, Quantum wells, Spectroscopy, Chemical reactions, Semiconductors

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Proceedings Article | 11 May 1994 Paper

Paper

Picosecond time-resolved investigations of carrier lifetime and carrier capture in InGaAs/GaAs quantum dots

Franz Daiminger, Axel Schmidt, Frank Faller, Alfred Forchel

Proceedings Volume 2139, (1994) https://doi.org/10.1117/12.175717

KEYWORDS: Quantum dots, Gallium arsenide, Diffusion, Luminescence, Indium gallium arsenide, Picosecond phenomena, Time resolved spectroscopy, Spectroscopy, Quantum efficiency, Quantum wells

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Proceedings Article | 1 February 1991 Paper

Paper

Characterization of picosecond GaAs metal-semiconductor-metal photodetectors

Josef Rosenzweig, C. Moglestue, A. Axmann, Joachim Schneider, Axel Huelsmann, M. Lambsdorff, Juergen Kuhl, Markus Klingenstein, H. Leier, Alfred Forchel

Proceedings Volume 1362, (1991) https://doi.org/10.1117/12.24539

KEYWORDS: Picosecond phenomena, Diodes, Electrons, Optoelectronic devices, Gallium arsenide, Monte Carlo methods, Photodiodes, Physics, Metals, Electron holes

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Showing 5 of 66 publications

Conference Committee Involvement (13)

Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII

25 January 2011 | San Francisco, California, United States

Photonic Crystal Materials and Devices

12 April 2010 | Brussels, Belgium

Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VII

24 January 2010 | San Francisco, California, United States

Quantum Dots, Particles, and Nanoclusters VI

25 January 2009 | San Jose, California, United States

Quantum Dots, Particles, and Nanoclusters V

21 January 2008 | San Jose, California, United States

Showing 5 of 13 Conference Committees

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