Mr. Andrew R. Novoselov Profile

Andrew R. Novoselov

at Institute of Semiconductor Physics

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Publications (4)

Proceedings Article | 26 April 2007 Paper

Application of pulsed UV laser for dicing of arrays and linear of photodiodes based on MCT solid solution

A. Novoselov, A. Klimenko, V. Vasilyev

Proceedings Volume 6636, 663619 (2007) https://doi.org/10.1117/12.742639

KEYWORDS: Photodiodes, Semiconductor lasers, Diodes, Pulsed laser operation, Silicon, Gallium arsenide, Ultraviolet radiation, Photodetectors, Staring arrays, Imaging arrays

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Proceedings Article | 25 February 2002 Paper

Processes in semiconductor materials after laser cutting

Andrei Novoselov, Anatoly Klimenko

Proceedings Volume 4426, (2002) https://doi.org/10.1117/12.456883

KEYWORDS: Semiconductor lasers, Diodes, Laser cutting, Silicon, Semiconductor materials, Semiconductors, Mercury cadmium telluride, Ultraviolet radiation, Liquids, Materials processing

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The results of laser - semiconductor interaction are presented. The characteristic zones are investigated after laser affects the semiconductor substrates by method of electro-physical (dynamic and static) performances of diagnostic structures. It has been found that: 1. Near of area of interaction of a laser radiation with a material of the target, the hot electrons generated by laser radiation, causes changes of properties of a material. It causes increase of reverse currents of the diodes. The magnification of reverse currents of the diode is observed which depends on supply voltage and distances between laser cut and diode. The distance between edge of the diode and edge of the laser cut with which begins increase of reverse currents of the diodes in Si: for supply voltage was 8,2 V - 5 micrometers , 20 V - 26 micrometers ; in HgCdTe: for working voltage (0,1 V) the distance was 18 micrometers . 2. The laser radiation causes temporary increase of reverse currents of the diodes on distances from 2 micrometers and more (measurement of a reverse currents of the diodes on distances 36 and 78 micrometers have shown reduction of a reverse currents, in time about 400 minutes). 3. Our experimental data allow us to develop criteria of definition of parameters of laser radiation for laser cutting of semiconductor materials on distances in some microns from elements of the integrated circuits. The basic criteria of a choice of laser radiation: 1. Repetition frequency of laser pulses; 2. Volume of destruction of a material for one pulse. The laser source for these experiments was an UV laser at 0,34 micrometers wavelength with 7 ns pulses, laser fluency was more than 1,1 J/cm² that corresponding to minimum energy density required to forming pits. The diagnostic structures included p-n junctions (Si, HgCdTe) or source of MOSFETs (Si). Our experimental data showing that the powerful high- speed laser tools for cutting of materials are of limited usefulness for semiconductor materials.

Proceedings Article | 7 June 2000 Paper

Optimization of nanosecond UV laser illumination for semiconductor materials (Si, HgCdTe, InSb)

Andrew Novoselov, Anatoly Klimenko, Evgeny Fedosenko, A. Plotnikov

Proceedings Volume 3933, (2000) https://doi.org/10.1117/12.387581

KEYWORDS: Semiconductor lasers, Semiconductors, Semiconductor materials, Silicon, Ultraviolet radiation, Mercury cadmium telluride, Scanning electron microscopy, Pulsed laser operation, Laser applications, Laser sources

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Proceedings Article | 27 August 1999 Paper

Degradation zones of semiconductor target (Si) formed as a result of nanosecond UV laser material processing

Andrew Novoselov, Anatoly Klimenko

Proceedings Volume 3884, (1999) https://doi.org/10.1117/12.361359

KEYWORDS: Diagnostics, Silicon, Semiconductor lasers, Laser cutting, Diodes, Laser processing, Laser irradiation, Semiconductors, Ultraviolet radiation, Oxides

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The results of laser-semiconductor material interaction are presented. The laser source for these experiments was an UV laser at 0.34 mkm wavelength with 7 ns pulses at 100 Hz repetition rate focused at the spot of 3 mkm diameter, laser fluence was more than 1.1 J/sq cm corresponding to the minimum energy density required to forming kerf. Material of target was p-Si with thermal oxide silicon. We have investigated changes of electrophysical (dynamic and static) performance of diagnostic structures vs. distance between the edge of laser kerf and the edge of diagnostic structures for definition of characteristic zones around the spot of laser - material interaction. The diagnostic structures included p-n junction or source of MOSFET. From the measurement made, back current for p-n junction and transfer characteristic for MOSFET and time carrier storage in source capacity of MOSFET were studied. We have determined the 3 zones around the spot of laser material processing: Zone 1. The electrophysical (dynamic and static) performance of diagnostic structures heavily changed at a distance as small as 4 - 5 mkm. It is bigger than length of region recrystallized material extracted from laser kerf (about 2 mkm). The leakage current increased. The length of zone depends from supply voltage to the diagnostic structures. For example, the length of zone 1 for supply voltage 8 V was 4 - 5 mkm and for supply voltage 20 V - 30 mkm. Zone 2. For distance between the edge of laser kerf and boundary of diagnostic structures larger than 5 mkm, the electrophysical (dynamic and static) performance of diagnostic structures changed, but restored in time. Time of 50 percent restore of electrophysical performance of diagnostic structure was about 408 min. Zone 3. For distance between the edge of laser kerf and boundary of diagnostic structures large than 70 mkm, the free electrons generated by laser irradiation, filled charge traps which began to release after laser material processing. Time of discharge traps was about 408 min. In our experiments we have realized a distance of 5 mkm form the laser kerf to the diagnostic structures and 28 mkm to the working multiplexer circuit.

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