We studied electron transport and microwave noise in Zn-polar BeMgZnO/ZnO and O-polar ZnO/MgZnO heterostructures with 2-dimensional electron gas (2DEG) grown on c-sapphire substrates by molecular beam epitaxy. In a short-pulse (<5 ns) high-field experiment, the electron drift velocity reached 1.2E7 cm/s at an electric field up to 200 kV/cm. Pulsed microwave hot-electron noise temperature measurements near 10 GHz in O- polar channels indicate that the hot electron temperature is controlled by hot LO phonons, which increase electron temperature, whereas the presence of excess noise (over "thermal" hot-electron noise) in the Zn- polar channels suggests some inhomogeneity of BeMgZnO barriers.
We present investigations of the fin-shaped GaN/AlGaN field effect transistors with two lateral Schottky barrier gates exactly placed on the edges of the fin-shaped transistor channel. We call this kind of FinFET modification the EdgeFET. It allowed us to efficiently control the current flow in two-dimensional electron gas conduction channel. We present experimental data of sub-THz detection by EdgeFETs. Control of the side gates allows changing the width of two-dimensional electron gas and forming a wire, as we expect should be beneficial for observation of terahertz plasma wave resonances. This paves the way towards future terahertz optopair using high-quality factor plasma wave resonances, for which it is necessary to eliminate oblique modes. We report also on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN–SiC hybrid material was developed in order to improve thermal management and to reduce trapping effects should be beneficial for observation of resonant emission.
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