EUV lithography continues to make scaling cost effective for chip manufacturers and allows Moore`s law to pursue. High NA EUV with its increased numerical aperture (NA) from 0.33NA to 0.55NA enables 1.7x smaller features and improved local CDU. This brings several benefits for advance chipmakers such as patterning cost reduction due to multi-patterning, reduced defect density as a result of process simplification and shorter cycle time via mask reduction. Currently, there are multiple high NA EUV systems (EXE:5000) which completed the built and qualification in the ASML factory. The first performance data is being collected via one of these high NA EUV systems. This paper will cover the performance results of the high NA EUV platform (EXE:5000) on imaging and overlay based on the initial findings from common learning collaboration. Furthermore, the progresses towards future high NA EUV systems will be described.
Most well-known litho-simulation packages work with Manhattan unit cells to exploit the advantages of fast Fourier transforms. Simple 1D features with arbitrary orientations may lead to the fact that quite a large 2D area is needed to describe those features. The obvious consequences are that the feature is approximated by a staircase and that the pitches are related to the angle of rotation. The latter leads often to an increase in computation time, especially when the topography of the mask is taken into account. An obvious way of avoiding that is to rotate the features and all pupil functions or lens properties to x- or y-axes. However, for anamorphic systems, where the demagnifications are fixed in absolute space, this is not straightforward and several actions have to be taken. We described how to do this exactly. It will be shown that the aerial images from a full 2D simulation compare well with that of an equivalent 1D version.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.