We report on our research in power scaling VECSEL around 1 μm to exceed 100W per chip. Recently, we have
utilized these optimized VECSEL chips to achieve a new record for a mode-locked VECSEL. The output power
of the laser was 3.4W. This corresponds to a pulse energy of 7.5nJ and a pulse peak power of 13.3kW. Both are
record values for a semiconductor laser in the femtosecond regime. These optimized structures have also been
used to demonstrate high power operation with a highly coherent TEM00 mode and to demonstrate a record
single frequency output power of 15W.
We report on our research in power scaling OPSL around 1 μm to exceed 100W per chip by combining a rigorous quantum design of an optimized MQW epitaxial structure, highly accurate and reproducible wafer growth and an efficient thermal management strategy. Recently we have utilized these state-of-the-art optimized OPSL chips to achieve a new record for a mode-locked OPSL with an intra-cavity SESAM. The average output power of the laser in the optimum operation point of mode-locked operation was 5.1W while being pumped with 25W of net pump power. This corresponds to a pulse energy of 3 nJ and a pulse peak power of 3.8 kW.
KEYWORDS: Quantum wells, Absorption, Diamond, Reflectivity, Chromium, Temperature metrology, High power lasers, Semiconducting wafers, Finite element methods, Gallium arsenide
Strategies for power scaling VECSELs, including improving thermal management, increasing the quantum well
gain/micro-cavity detuning that increases the threshold but increases roll-over temperature, and double-passing the
excess pump via reflection from a metalized reflector at the back of a transparent distributed Bragg reflector (DBR) were
studied. The influence of the heat spreader thickness and the pump profile on the temperature rise inside the active
region was investigated using commercial finite element analysis software. Improvement was observed in optical
efficiency of the VECSEL devices with a transparent DBR by double passing the pump light. Higher dissipated power at
maximum output power was found in devices with larger spectral detuning between the quantum well gain and the
micro-cavity detuning.
We present photoluminescence and modal gain measurements in a Ga(NAsP) single-quantum well sample
pseudomorphically grown on silicon substrate. The temperature dependence indicates that disorder induced localization
effects dominate the low temperature photoluminescence spectra. Nevertheless, using the variable stripe length method,
we observe modal gain values up to 15 cm-1 at room temperature. These values are very promising, demonstrate the high
optical quality of the new dilute nitride material Ga(NAsP) and underline its candidacy for electrically pumped lasers on
silicon substrate.
We present modal gain measurements in Ga(NAsP) heterostructures pseudomorphically grown on silicon substrate.
Using the variable stripe length method we analyze the modal gain performance of an unprocessed single quantum well
sample for different excitation densities. We obtain high modal gain values up to 55 cm-1 at room temperature. These
values are comparable to those of common high quality laser material. This demonstrates the high optical quality of the
new dilute nitride material Ga(NAsP) and underlines its candidacy for electrically pumped lasing on silicon substrate.
We present an overview of the quantum design, growth and lasing operation of both IR and mid-IR OPSL
structures aimed at extracting multi-Watt powers CW and multi-kW peak power pulsed. Issues related to
power scaling are identified and discussed. The IR OPSLs based on InGaAs QW bottom emitters targeted at
wavelengths between 1015nm and 1040nm are operated in CW mode (yielding a maximum power of 64W)
and pulsed (peak power of 245W). The mid-IR top emitter OPSLs designed to lase at 2μm are based on a
novel lattice mismatched growth using InGaSb QWs and yield a maximum peak power of 350W pulsed.
An approach based on fully microscopically computed material properties like gain/absorption, radiative
and Auger recombination rates are used to design, analyze and develop optimization strategies for Vertical
External Cavity Surface Emitting Lasers for the IR and mid-IR with high quantitative accuracy. The microscopic
theory is used to determine active regions that are optimized to have minimal carrier losses and
associated heating while maintaining high optical gain. It is shown that in particular for devices in the
mid-IR wavelength range the maximum output power can be improved by more than 100% by making rather
minor changes to the quantum well design. Combining the sophisticated microscopic models with simple onedimensional
macroscopic models for optical modes, heat and carrier diffusion, it is shown how the external
efficiency can be strongly improved using surface coatings that reduce the pump reflection while retaining the
gain enhancing cavity effects at the lasing wavelength. It is shown how incomplete pump absorption can be
reduced using optimized metallization layers. This increases the efficiency, reduces heating and strongly improves
the maximum power. Applying these concepts to VECSELs operating at 1010nm has already resulted
in more than twice as high external efficiencies and maximum powers. The theory indicates that significant
further improvements are possible - especially for VECSELs in the mid-IR.
The quantum design of VECSEL structures is discusssed using a commercially available design tool. Examples
of realized structures are presented and comparisons between experimental results and modelling predictions are
shown.
Design of optimized semiconductor optically-pumped semiconductor lasers (OPSLs) depends on many ingredients
starting from the quantum wells, barrier and cladding layers all the way through to the resonant-periodic gain (RPG) and
high reflectivity Bragg mirror (DBR) making up the OPSL active mirror. Accurate growth of the individual layers
making up the RPG region is critical if performance degradation due to cavity misalignment is to be avoided.
Optimization of the RPG+DBR structure requires knowledge of the heat generation and heating sinking of the active
mirror. Nonlinear Control Strategies SimuLaseTM software, based on rigorous many-body calculations of the
semiconductor optical response, allows for quantum well and barrier optimization by correlating low intensity
photoluminescence spectra computed for the design, with direct experimentally measured wafer-level edge and surface
PL spectra. Consequently, an OPSL device optimization procedure ideally requires a direct iterative interaction between
designer and grower. In this article, we discuss the application of the many-body microscopic approach to OPSL devices
lasing at 850nm, 1040nm and 2μm. The latter device involves and application of the many-body approach to mid-IR
OPSLs based on antimonide materials. Finally we will present results on based on structural modifications of the
epitaxial structure and/or novel material combinations that offer the potential to extend OPSL technology to new
wavelength ranges.
The GaP-based dilute nitride Ga(NAsP) reveals a direct band gap and first laser device operation based on
GaP substrate have been demonstrated recently. Since the lattice mismatch between GaP and Si is very small
and the defect free deposition of thick GaP/Ga(NP) sequences on off-oriented Si substrate have been reported
in literature, the epitaxial transfer of this novel direct band gap material Ga(NAsP) on Si substrate should
allow for the monolithic integration of laser diodes on Si microprocessors. The present study introduces a
nucleation scheme of GaP on exact oriented (001) Si substrate by metal organic vapour phase epitaxy
(MOVPE) to achieve this goal. Appling an optimized annealing procedure to (001) Si substrates with a slight
off-orientation towards (see manuscript) direction leads to a Si surface, where step-doubling has set in and bi-atomic
terraces are formed. Even though mono-atomic terraces are still present in low density, an optimized GaP
nucleation procedure ensures self-annihilation of all present antiphase domains (APDs) and reveals an
antiphase disorder free III/V film on Si after the deposition of about 50nm of GaP. This ideal nucleation layer
together with a precise strain-management allows for the deposition of Ga(NAsP)/(BGa)(AsP) multi-quantum-well (MQW) heterostructures embedded in 1μm thick (BGa)P layers on Si substrate. Structural
investigations using X-ray diffraction (XRD) and transmission electron microscopy (TEM) prove a high
crystal quality and abrupt heterointerfaces. This monolithic integration concept of the GaP-based laser
material on exact oriented (001) Si substrates enables the integration of optoelectronic devices into the
standard CMOS process.
The current status of the development of the novel dilute nitride Ga(NAsP)/GaP for the monolithic integration
of optoelectronic functionality to Si is summarized from the concept, design and epitaxial optimization to the
verification of direct energy gap and the realization of electrical injection laser devices at room temperature.
We demonstrate 0.7W cw output power at 520nm from an intracavity frequency doubled optically pumped semiconductor disk laser at room temperature. High beam quality and optical conversion efficiency of 10% has been achieved.
Optically-pumped semiconductor disk lasers offer high output power
in combination with good beam quality. By optimizing epitaxial
quality as well as thermal resistance, we have demonstrated more than 8W of continuous-wave, room-temperature emission at 1000nm. These high power-levels are tied to high optical-conversion efficiencies of more than 40%. Whereas available wavelengths for solid-state disk lasers are restricted to a set of atomic transitions, semiconductor disk lasers can be conveniently tailored to meet almost any wavelength. Building upon the high-power results at 1000nm, we have extended the emission range towards 900nm as well as 1100nm. Two prominent examples are devices realized at 920nm and 1040nm, in each case demonstrating several Watts of laser output.
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