Cryogenic photoluminescence spectroscopy is a versatile tool to locally probe the defects in diverse material platforms as well as to observe modifications of the underlying electronic band structure in novel two-dimensional quantum materials such as the monolayer transition metal dichalcogenides (TMDs) (e.g. MoS2, WS2, WSe2, and MoSe2) and their heterostructures. These monolayer TMDs feature direct bandgaps and excitons with high binding energies due to quantum confinement which are conducive towards optoelectronic applications. We present our latest results on the characterization of monolayer TMDs and heterostructures based on monolayer TMDs using our newly developed fiber optic-based cryogenic photoluminescence setup in the Quantum Engineered Nano Devices Laboratory (QENDL) at the Naval Information Warfare Center Pacific (NIWC Pacific) towards their future implementation in quantum applications. Specifically, we investigate the temperature dependence of photoluminescence (PL) for Chemical Vapor Deposition (CVD) and Molecular Beam Epitaxy (MBE) grown monolayer TMDs on sapphire (0001) substrates; CVD monolayer WS2-MoS2 heterostructure on sapphire (0001) substrate; CVD monolayer WSe2-MoSe2 heterostructure on sapphire (0001) substrate; CVD monolayer MoS2 on CVD monolayer hexagonal boron nitride (hBN) on SiO2-silicon substrate; and CVD monolayer WS2 on CVD monolayer hBN on sapphire (0001) substrate. We observed a significant temperature dependent direct bandgap red shift in CVD and MBE monolayer MoSe2 on sapphire (0001), MBE monolayer WS2 on sapphire (0001), and MBE monolayer WSe2 on sapphire (0001) substrate. We estimated the exciton binding energy in MBE monolayer WSe2 on sapphire (0001) by fitting the peak PL intensity values to the Arrhenius equation. Furthermore, we observed quite different temperature dependence of PL spectra from the monolayer CVD WS2-MoS2 heterostructure on sapphire (0001) substrate, which suggests the existence of spatial inhomogeneity across the sample. We also observed a temperature dependent PL peak red shift in both monolayer CVD WS2-MoS2 heterostructure on sapphire (0001) and monolayer CVD WSe2-MoSe2 heterostructure on sapphire (0001) substrate. Finally, we observed significant variability in the PL peak wavelength dependence on temperature for the transferred monolayer CVD MoS2 on transferred monolayer CVD hBN on SiO2-silicon substrate as well as for the transferred monolayer CVD WS2 on transferred monolayer CVD hBN on sapphire (0001) substrate.
Monolayer transition metal dichalcogenides (TMDs) are promising 2D semiconductors that feature direct bandgaps useful for various quantum and optoelectronic applications. We present on our progress in establishing a cryogenic photoluminescence setup using a cryogenic probe station with bare multi-mode fibers that allows for active-device biasing of novel material platforms. Using this system, we are able to detect the photoluminescence signal from various chemical vapor deposited (CVD) and molecular beam epitaxy (MBE) grown 2D semiconductors on sapphire (0001) substrates in vacuum. We observe a temperature dependent direct bandgap red-shift of around 40nm (from 8K to 450K) for CVD grown monolayer WS2 and CVD grown monolayer WSe2 on sapphire (0001) substrates. We observe a temperature dependent direct bandgap red-shift of around 37nm (from 6K to 450K) for MBE grown monolayer MoSe2 on sapphire (0001) substrates. Interestingly, for monolayer MoS2 on sapphire (0001) substrates, we observe the emergence of a strong photoluminescence signal at cryogenic temperatures below 100K, in addition to the A exciton luminescence signal, which is attributed to bound excitons.
We present on our progress in the design, fabrication, and characterization of light-emitting transistors based on twodimensional materials (2D-LETs) and top-gate dielectrics that enable voltage-controlled wavelength-agile light emission spanning from the visible (VIS) to the near-infrared (NIR) spectrum at room temperature. Monolayer transition metal dichalcogenide (TMD) devices (e.g. MoS2, MoSe2, WS2, WSe2) emit in the VIS-NIR range with respect to their direct bandgaps. The wavelength of the light emission from the TMD devices may be tuned to the NIR by reducing their direct bandgaps via the giant Stark Effect.
Optically active rare-earth Neodymium (Nd) ions are integrated in Niobium (Nb) thin films forming a new quantum memory device (Nd:Nb) targeting long-lived coherence times and multi-functionality enabled by both spin and photon storage properties. Nb is implanted with Nd spanning 10-60 keV energy and 1013-1014 cm-2 dose producing a 1- 3% Nd:Nb concentration as confirmed by energy-dispersive X-ray spectroscopy. Scanning confocal photoluminescence (PL) at 785 nm excitation are made and sharp emission peaks from the 4F3/2 -< 4I11/2 Nd3+ transition at 1064-1070 nm are examined. In contrast, un-implanted Nb is void of any peaks. Line-shapes at room temperature are fit with Lorentzian profiles with line-widths of 4-5 nm and 1.3 THz bandwidth and the impacts of hyperfine splitting via the metallic crystal potential are apparent and the co-contribution of implant induced defects. With increasing Nd from 1% to 3%, there is a 0.3 nm red shift and increased broadening to a 4.8 nm linewidth. Nd:Nb is photoconductive and responds strongly to applied fields. Furthermore, optically detected magnetic resonance (ODMR) measurements are presented spanning near-infrared telecom band. The modulation of the emission intensity with magnetic field and microwave power by integration of these magnetic Kramer type Nd ions is quantified along with spin echoes under pulsed microwave π-π/2 excitation. A hybrid system architecture is proposed using spin and photon quantum information storage with the nuclear and electron states of the Nd3+ and neighboring Nb atoms that can couple qubit states to hyperfine 7/2 spin states of Nd:Nb and onto NIR optical levels excitable with entangled single photons, thus enabling implementation of computing and networking/internet protocols in a single platform.
O. Nayfeh, B. Higa, B. Liu, P. Sims, C. Torres, B. Davidson, L. Lerum, H. Romero, M. Fahem, M. Lasher, R. Barua, A. deEscobar, J. Cothern, K. Simonsen, A. Ramirez, H. Banks, S. Carter, D. K. Gaskill, T. Reinecke
Defect qubits in silicon carbide are an emerging system for quantum information science and technology. It is important to passivate and protect the surface to preserve the particular defect configurations as well as to provide means to tune the opto-electronic properties via electronic or opto-electronic gating. In this work, we construct defect qubit device structures that integrate Indium-Tin-Oxide (ITO) electrodes and a thin atomic layer deposited (ALD) siliconoxide surface passivation. The devices are formed via 12C ion implantation and high temperature annealing of 4H and 6H silicon carbide. The process involves the integration of optically transparent indium tin oxide electrodes and a surface passivation film of silicon-oxide by atomic layer deposition. We find good contact is formed between ITO and SiC, and after complete processing, the measured broad-band photoluminescence (PL) with excitation at 785 nm in a scanning PL system is consistent with the formation of silicon vacancies. We find minimal change in the room temperature emission in regions beneath the ITO electrodes and the SiOx-SiC passivated surface. We evaluate the ability of an electric field to tune the optically detected magnetic resonance (ODMR) response of the qubit system by simulations of the spectrum with a modified spin Hamiltonian that considers the Stark Effect. We quantify the simulated strength of the electric-field tuning of the energy levels and ODMR response for the various identified spin 3/2 transitions of the silicon vacancy.
Observation of the time dependence of the up-conversion fluorescence allows the determination of the relative importance of the excited state absorption and energy transfer up-conversion in 0.5% and 50% erbium-doped YAG. Pump radiation up to 10 kW/cm2 shows drastic changes in the effective life time of nearly all excited energy states.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.