KEYWORDS: Atomic force microscopy, Servomechanisms, Capillaries, Metrology, Feedback control, Semiconducting wafers, Image resolution, Electron beams, Control systems, Video
This paper reports recent progress in using Atomic Force Microscopy as a defect review tool for patterned wafers. The key developments in the AFM technology are substantial scan speed improvements and the ability to reach feature bottom-CDs in a narrow trench. The latter is accomplished by controlling the tip-sample interaction via the short-range interaction force. Narrow trenches with vertical side wall angles comparable to current FinFET dimensions were imaged using the AFM, where imaging speeds for this sample reached about 0.2 frames per second, providing quantified topographic data for key features of the trenches. The sub-10 nm resolution data of high speed AFM demonstrates the technology as a viable solution for defect review.
ITRS Roadmap requires defect size measurement below 10 nanometers and challenging classifications for both blank
and patterned wafers and masks. Atomic force microscope (AFM) is capable of providing metrology measurement in 3D
at sub-nanometer accuracy but has long suffered from drawbacks in throughput and limitation of slow topography
imaging without chemical information. This presentation focus on two disruptive technology developments, namely high
speed AFM and quantitative nanomechanical mapping, which enables high throughput measurement with capability of
identifying components through concurrent physical property imaging. The high speed AFM technology has allowed the
imaging speed increase by 10-100 times without loss of the data quality. Such improvement enables the speed of defect
review on a wafer to increase from a few defects per hour to nearly 100 defects an hour, approaching the requirements of
ITRS Roadmap. Another technology development, Peak Force Tapping, substantially simplified the close loop system
response, leading to self-optimization of most challenging samples groups to generate expert quality data. More
importantly, AFM also simultaneously provides a series of mechanical property maps with a nanometer spatial
resolution during defect review. These nanomechanical maps (including elastic modulus, hardness, and surface adhesion)
provide complementary information for elemental analysis, differentiate defect materials by their physical properties,
and assist defect classification beyond topographic measurements. This paper will explain the key enabling technologies,
namely high speed tip-scanning AFM using innovative flexure design and control algorithm. Another critical element is
AFM control using Peak Force Tapping, in which the instantaneous tip-sample interaction force is measured and used to
derive a full suite of physical properties at each imaging pixel. We will provide examples of defect review data on
different wafers and media disks. The similar AFM-based defect review capacity was also applied to EUV masks.
A new nanoscale electric field sensor was developed for studying triboelectric charging in
terrestrial and Martian dust devils. This sensor is capable to measure the large electric fields for
large dust devils without saturation. However, to quantify the electric charges and the field
strength it is critical to calibrate the mechanical stiffness of the sensor devices. We performed a
technical feasibility study of the Nano E-field Sensor stiffness by a non-contact stiffness
measurement method. The measurement is based on laser Doppler vibrometer measurement of
the thermal noise due to energy flunctuations in the devices. The experiment method provides a
novel approach to acquire data that is essential in analyzing the quantitative performance of the
E-field Nano Sensor. To carry out the non-contact stiffness measurement, we fabricated a new
Single-Walled Carbon Nanotube (SWCNT) E-field sensor with different SWCNTs suspension
conditions. The power spectra of the thermal induced displacement in the nano E-field sensor
were measured at the accuracy of picometer. The power spectra were then used to derive the
mechanical stiffness of the sensors. Effect of suspension conditions on stiffness and sensor
sensitivty was discussed. After combined deformation and resistivity measurement, we can
compare with our laboratory testing and field testing results. This new non-contact measurement
technology can also help to explore to other nano and MEMS devices in the future.
In this article, an approach based on the recently-developed inversion-based iterative control (IIC) to cancel the
cross-axis coupling effect of piezoelectric tube scanners (piezoscanners) in tapping mode atomic force microscope
(AFM) imaging is proposed. Cross-axis coupling effect generally exists in piezoscanners used for 3D (x-y-z axes)
nanopositioning in applications such as AFM, where the vertical z-axis movement can be generated by the lateral
x-y axes scanning. Such x/y-to-z cross-coupling becomes pronounced when the scanning is at large range and/or
at high-speed. In AFM applications, the coupling-caused position errors, when is large, can generate various
adverse effects, including large imaging and topography distortions, and damage of the cantilever probe and/or
the sample. This paper utilizes the IIC technique to obtain the control input to precisely track the couplingcaused
x/y-to-z displacement (with sign-flipped). Then the obtained input is augmented as a feedforward control
to the existing feedback control in tapping-mode imaging, resulting in the cancellation of the coupling effect. The
proposed approach is illustrated through the exemplary applications of the nanoasperity measurement on harddisk
drive. Experimental results show that the x/y-to-z coupling effect in large-range (20 μm) tapping-mode
imaging at high scan rates (12.2 Hz to 24.4 Hz) can be effectively removed.
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