Micro-light emitting diodes (micro-LEDs) have attracted lots of attention in recent years due to their compact size, high efficiency, and good reliability for display applications. More and more research communities and industries are putting efforts into exploring micro-LEDs to achieve high-performance micro-LED display which can be used in monitor, watch, AR/VR, etc.
Here we present a novel application of nanoporous GaN with quantum dots (NPQD®)_in the field of micro-LEDs. We demonstrate fabricating full-color monolithic micro-LEDs with loading green and red QDs inside nanoporous GaN. Strong light scattering induced by nanoporous GaN structure greatly enhanced the absorption of the blue pumping light by QDs. Nearly 50% power conversion efficiency from blue to red has been achieved at 2.5µm sub-pixel size. A full-color micro-LED display driven by CMOS with a sub-pixel size of less than 5um has been fabricated using NPQD® technology.
We report loading quantum dots (QDs) inside nanoporous (NP) GaN and using NP-GaN as a color converter to fabricate micro-LEDs. A strong light scattering can be induced by NP-GaN and blue pumping light can be significantly absorbed by red and green QDs. More than 90% of light conversion efficiency has been achieved for both red and green QDs inside NP-GaN. Monolithic red, green, and blue color micro-LEDs have been achieved with loading red and green QDs into NPGaN.
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