Despite active scientific research and substantial business interest, the nature of the operational degradation of OLEDs
remains only partly understood. From the perspective of device physics, there are numerous studies indicating that
operational degradation, i.e., monotonic loss of luminance efficiency and increase of drive voltage, is caused primarily
by the accumulation of traps-nonradiative recombination centers and luminescence quenchers in the vicinity of the
recombination zone. However, chemistries underlying the formation of those species remain elusive. In this work, we
focused on two representative hole transport materials, NPB and TAPC, to study their chemical transformations in
operating OLED devices. We found that the presence of these hole transport materials in several representative
fluorescent and phosphorescent devices may result in the formation of new chemical materials, corresponding to
homolytic dissociation of weak C-N bonds of NPB, and C-N/C-C bonds of TAPC. Qualitatively similar to luminance
efficiency loss in operating devices, the accumulation of the degradation products is monotonic and nonlinear. Using
bilayer hole transport layers, we established that the chemistries of NPB and TAPC are strongly confined to the
immediate vicinity of the main recombination interfaces and are likely to be initiated by singlet excited states of these
arylamines. It is concluded that the differences in singlet excited state energies and bond dissociation energies are
responsible for dramatic differences in the degradation rates of OLED devices using NPB- and TAPC-based hole
transport layers.
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