In this work we have studied functioning of memristors based on TiN-TiO2-SiO2-W open edge sandwich structures on Si substrates in inert gas medium. A custom-made experimental setup that allowed controlled gas atmosphere within the pressure range of 0.0001-750 Torr was used. The electroforming was performed by a procedure of applying a quasistatic electric pulse of 10-20 V. The resistive switching was performed by pulses of 5 V, 30 ms for the “ON” switching and 5-8 V, 100 ns for the “OFF” switching. We carried out investigations for nitrogen and argon inert gases. As a result, first, we have established that the resistive switching in inert gases (both nitrogen and argon) of the memory elements electroformed in vacuum, reliably takes place in the entire inert gas pressure range including the maximum experimental value of 1 atm. Second, we showed that the electroforming takes place at the maximum inert gas pressure of 100 Torr.
The study of electroforming processes in various open sandwich metal-SiO2-metal structures (with different materials of electrodes) and I–V-curves at both voltage polarities allowed to find the main factor responsible for the presence of stable electroforming and the absence of breakdowns after electroforming (N-shape I-V-curve can be drawn repeatedly). This factor is making of structure anode of tungsten at any (top or bottom) position of this electrode. The use of molybdenum instead of tungsten in such structures essentially allows to decrease the electroforming voltage (from 10-11 to 4-5 V), which makes the process more reliable.
In this work we report a new approach to the fabrication of metallic nanowire and nanonet structures on a-Si/SiO2/Si substrates by combine plasma etching processes. For the formation of Pt nanostructures we used a controlled two-step plasma etching in C4F8/Ar and SF6 plasma, which resulted in a self-formation of fluorocarbon nanowires and nanonets. Then, we used these nanostructures as nanoscale templates for 10 nm thin metallic nanowires, which were obtained with magnetron Pt film deposition, Ar plasma sputtering and Pt redeposition.
In this work we have manufactured and studied memristors based on TiN-TiO2-SiO2-W open sandwich structures on Si substrates. We have built an experimental setup and developed a technique of the memristor resistive switching investigations in the controlled oxygen atmosphere within the pressure range of 0.0001–750 Torr. The resistive switching of the studied memory elements was carried out using voltage pulses with varying limitation current and depending on the oxygen pressure. As a result, we have found that the memory element resistive switching to the highconductivity “ON” state takes place below a certain threshold oxygen pressure, which has a non-trivial dependence on the limitation current.
In this work application of x-ray total external reflection method for the determination of the porosity value of PbTe and
PbSe epitaxial films on silicon substrates subjected to anodic electrochemical etching in a Norr electrolyte was carried
out. It is shown that the porosity values of the films can be in the range of 10-68% depending on the anodizing
conditions. Triple-crystal x-ray diffractometry method was utilized for the estimation of quantitative characteristics of
the pore dimensions along different directions. Nanometer-range pore dimensions and shape are estimated.
Conference Committee Involvement (1)
The International Conference on Micro- and Nano-Electronics 2018
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.