Dr. Hongjian Li Profile

Dr. Hongjian Li

at Univ of California Santa Barbara

SPIE Involvement:

Author

Publications (4)

Proceedings Article | 9 March 2022 Presentation

III-nitride-based RGB microLEDs for AR/VR applications

Steve Denbaars, Matt Wong, Panpan Li, Hongjian Li, Jordan Smith, Ryan White, Jake Ewing, Pavel Shapturenka, Michael Gordon, Cheyenne Lynsky, James Speck, Shuji Nakamura

Proceedings Volume PC12022, PC1202201 (2022) https://doi.org/10.1117/12.2611304

KEYWORDS: RGB color model, Solid state lighting, Indium gallium nitride, Gallium nitride, External quantum efficiency, Quantum wells, Photonic devices, Packaging, Nanostructures, Light emitting diodes

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Proceedings Article | 5 March 2022 Presentation

Demonstration and temperature-dependent analysis of efficient semipolar violet laser diodes heteroepitaxially grown on high-quality low-cost GaN/sapphire substrates

Haojun Zhang, Hongjian Li, Panpan Li, Shuji Nakamura, Steven DenBaars

Proceedings Volume PC12001, PC120010G (2022) https://doi.org/10.1117/12.2610614

KEYWORDS: Semiconductor lasers, Gallium nitride, Electroluminescence, Vapor phase epitaxy, Sapphire, Pulsed laser operation, Light emitting diodes, Finite element methods, Device simulation

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Proceedings Article | 15 March 2021 Presentation + Paper

New fabrication method of InGaN laser diode by epitaxial lateral overgrowth and cleavable technique from free-standing non- and semi-polar GaN substrate

Takeshi Kamikawa, Srinivas Gandrothula, Hongjian Li, V. Bonito Olivia, Feng Wu, Daniel Cohen, James Speck, Steven Denbaars, Shuji Nakamura

Proceedings Volume 11686, 116860M (2021) https://doi.org/10.1117/12.2584814

KEYWORDS: Epitaxial lateral overgrowth, Gallium nitride, Indium gallium nitride, Semiconductor lasers, Fabrication, Crystals, Polymers, Polymer thin films, Laser damage threshold, Laser crystals

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SPIE Journal Paper | 8 May 2018

UV-C whispering-gallery modes in AlN microdisks with AlGaN-based multiple quantum wells on Si substrate

Yiyun Zhang, Hongjian Li, Lining Liu, Panpan Li, Liancheng Wang, Xiaoyan Yi, Guohong Wang

JNP, Vol. 12, Issue 04, 043502, (May 2018) https://doi.org/10.1117/12.10.1117/1.JNP.12.043502

KEYWORDS: Silicon, Aluminum nitride, Quantum wells, Semiconducting wafers, Gallium, Lithium, Aluminum, Absorption, Ultraviolet radiation, Optical pumping

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