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This paper presents the main characteristics of the CEA / LETI technology which is based on a monolithically integrated structure over a fully completed readout circuit from a commercially available 0.5 μm design rules CMOS line. The technology maturity will be illustrated by the results obtained at LETI/LIR and SOFRADIR on a 320 x 240 with a pitch of 45 μm. First improvement on device reliability and characterization results will be presented.
Uncooled amorphous silicon TEC-less 1/4 VGA IRFPA with 25um pixel-pitch for high volume applications
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This course addresses the IR detector field focusing on IRFPAs (IR detector of second generation and third generation). It will provide a broad and useful background on these IR detectors and consists of two parts: one focusing on uncooled detectors (presented by Jean Luc Tissot) and a second dealing with cooled detectors (presented by Philippe Tribolet). For the different types of detectors, the technologies (including newer ones) are briefly described and the state of the art is presented. Main applications and the differences between and advantages of the various types available are also discussed. Finally, guidelines for estimating and choosing IRFPAs are discussed.
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