Dr. Kang-Hoon Choi Profile

Dr. Kang-Hoon Choi

at LFoundry GmbH

SPIE Involvement:

Author

Area of Expertise:

Electron Beam Lithography and Nanofabrications , Proximity Effect Correction & Data Preparation , Electron Beam Resist Process Development and Optimization , E-Beam Lithography Tool Optimization and its Performance Characterization , SEM based CD Metrology

Websites:

Company Website

Publications (28)

Proceedings Article | 23 October 2015 Paper

Paper

Sensitivity analysis for high accuracy proximity effect correction

Xaver Thrun, Clyde Browning, Kang-Hoon Choi, Thiago Figueiro, Christoph Hohle, Mohamed Saib, Patrick Schiavone, Johann Bartha

Proceedings Volume 9635, 963515 (2015) https://doi.org/10.1117/12.2197175

KEYWORDS: Point spread functions, Critical dimension metrology, Algorithm development, Scattering, Calibration, Cadmium sulfide, Computer simulations, Semiconducting wafers, Photovoltaics, Electron beams

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Proceedings Article | 19 March 2015 Paper

Paper

Verification of E-Beam direct write integration into 28nm BEOL SRAM technology

Christoph Hohle, Kang-Hoon Choi, Manuela Gutsch, Norbert Hanisch, Robert Seidel, Katja Steidel, Xaver Thrun, Thomas Werner

Proceedings Volume 9423, 94231B (2015) https://doi.org/10.1117/12.2087612

KEYWORDS: Metals, Semiconducting wafers, Electron beam lithography, Etching, Electron beam direct write lithography, Photomasks, Optical alignment, Wafer-level optics, Back end of line, Electron beams

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Electron beam direct write lithography (EBDW) potentially offers advantages for low-volume semiconductor manufacturing, rapid prototyping or design verification due to its high flexibility without the need of costly masks. However, the integration of this advanced patterning technology into complex CMOS manufacturing processes remains challenging. The low throughput of today’s single e-Beam tools limits high volume manufacturing applications and maturity of parallel (multi) beam systems is still insufficient [1,2]. Additional concerns like transistor or material damage of underlying layers during exposure at high electron density or acceleration voltage have to be addressed for advanced technology nodes. In the past we successfully proved that potential degradation effects of high-k materials or ULK shrink can be neglected and were excluded by demonstrating integrated electrical results of 28nm node transistor and BEOL performance following 50kV electron beam dry exposure [3]. Here we will give an update on the integration of EBDW in the 300mm CMOS manufacturing processes of advanced integrated circuits at the 28nm SRAM node of GLOBALFOUNDRIES Dresden. The work is an update to what has been previously published [4]. E-beam patterning results of BEOL full chip metal and via layers with a dual damascene integration scheme using a 50kV VISTEC SB3050DW variable shaped electron beam direct writer at Fraunhofer IPMSCNT are demonstrated. For the patterning of the Metal layer a Mix & Match concept based on the sequence litho - etch -litho -etch (LELE) was developed and evaluated wherein several exposure fields were blanked out during the optical exposure. Etch results are shown and compared to the POR. Results are also shown on overlay performance and optimized e-Beam exposure time using most advanced data prep solutions and resist processes. The patterning results have been verified using fully integrated electrical measurement of metal lines and vias on wafer level. In summary we demonstrate the integration capability of EBDW into a productive CMOS process flow at the example of the 28nm SRAM technology node.

Proceedings Article | 17 October 2014 Paper

Paper

Integration of e-beam direct write in BEOL processes of 28nm SRAM technology node using mix and match

Manuela Gutsch, Kang-Hoon Choi, Norbert Hanisch, Christoph Hohle, Robert Seidel, Katja Steidel, Xaver Thrun, Thomas Werner

Proceedings Volume 9231, 92310F (2014) https://doi.org/10.1117/12.2067884

KEYWORDS: Metals, Etching, Semiconducting wafers, Optical alignment, Electron beam direct write lithography, Photomasks, Back end of line, Electron beam lithography, Scanning electron microscopy, Electron beams

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Proceedings Article | 8 October 2014 Paper

Paper

Effective corner rounding correction in the data preparation for electron beam lithography

Kang-Hoon Choi, Clyde Browning, Thiago Figueiro, Christoph Hohle, Michael Kaiser, Patrick Schiavone

Proceedings Volume 9235, 92350U (2014) https://doi.org/10.1117/12.2066156

KEYWORDS: Chromium, Electron beam lithography, Data corrections, Cadmium, Beam shaping, Neodymium, Lithography, Photoresist processing, Photomasks, Critical dimension metrology

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Proceedings Article | 1 October 2013 Paper

Paper

Extreme long range process effects characterization and compensation

Thiago Figueiro, Clyde Browning, Martin Thornton, Cyril Vannuffel, Kang-Hoon Choi, Christoph Hohle, Jean-Herve Tortai, Patrick Schiavone

Proceedings Volume 8886, 88860F (2013) https://doi.org/10.1117/12.2030664

KEYWORDS: Semiconducting wafers, Calibration, Point spread functions, Reticles, Electron beam lithography, Mathematical modeling, Chemical mechanical planarization, Modulation, Forward error correction, Metrology

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Proceedings Article | 23 September 2013 Paper

Paper

Metrology variability and its impact in process modeling

Thiago Figueiro, Mohamed Saib, Kang-Hoon Choi, Christoph Hohle, Martin Thornton, Cyril Vannufel, Jean-Hervé Tortai, Patrick Schiavone

Proceedings Volume 8880, 888020 (2013) https://doi.org/10.1117/12.2026423

KEYWORDS: Calibration, Metrology, Semiconducting wafers, Error analysis, Process modeling, Data modeling, Point spread functions, Opacity, Electron beam lithography, Statistical modeling

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Proceedings Article | 29 March 2013 Paper

Paper

Effects on electron scattering and resist characteristics using assisting underlayers for e-beam direct write lithography

Xaver Thrun, Kang-Hoon Choi, Norbert Hanisch, Christoph Hohle, Katja Steidel, Douglas Guerrero, Thiago Figueiro, Johann Bartha

Proceedings Volume 8682, 86820Z (2013) https://doi.org/10.1117/12.2011461

KEYWORDS: Silicon, Semiconducting wafers, System on a chip, Aluminum, Titanium, Scattering, Point spread functions, Metals, Neodymium, Electron beam lithography

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Proceedings Article | 26 March 2013 Paper

Paper

Influence of high-energy electron irradiation on ultra-low-k characteristics and transistor performance

Katja Steidel, Kang-Hoon Choi, Martin Freitag, Manuela Gutsch, Christoph Hohle, Robert Seidel, Xaver Thrun, Thomas Werner

Proceedings Volume 8680, 86801A (2013) https://doi.org/10.1117/12.2011467

KEYWORDS: Back end of line, Transistors, Semiconducting wafers, Dielectrics, Oxides, Resistance, Copper, Electron beam lithography, Capacitance, Metals

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Proceedings Article | 8 November 2012 Paper

Paper

Advanced module for model parameter extraction using global optimization and sensitivity analysis for electron beam proximity effect correction

Thiago Figueiro, Kang-Hoon Choi, Manuela Gutsch, Martin Freitag, Christoph Hohle, Jean-Hervé Tortai, Mohamed Saib, Patrick Schiavone

Proceedings Volume 8522, 852212 (2012) https://doi.org/10.1117/12.965312

KEYWORDS: Calibration, Point spread functions, Data modeling, Optimization (mathematics), Semiconducting wafers, Electron beams, Beam analyzers, Metrology, Photoresist processing, Electron beam lithography

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Proceedings Article | 21 March 2012 Paper

Paper

Feasibility study of optical/e-beam complementary lithography

Christoph Hohle, Kang-Hoon Choi, Martin Freitag, Manuela Gutsch, Philipp Jaschinsky, Frank Kahlenberg, Christof Klein, Jan Klikovits, Jan Paul, Matthias Rudolph, Xaver Thrun

Proceedings Volume 8323, 83232C (2012) https://doi.org/10.1117/12.916386

KEYWORDS: Etching, Lithography, Electron beam lithography, Silicon, Semiconducting wafers, Photomasks, 193nm lithography, Electron beam direct write lithography, Beam shaping, Optics manufacturing

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Proceedings Article | 19 March 2012 Paper

Paper

Demonstration of 22nm SRAM features with patternable hafnium oxide-based resist material using electron-beam lithography

Xaver Thrun, Kang-Hoon Choi, Martin Freitag, Andrew Grenville, Manuela Gutsch, Christoph Hohle, Jason Stowers, Johann Bartha

Proceedings Volume 8325, 832518 (2012) https://doi.org/10.1117/12.917814

KEYWORDS: Semiconducting wafers, Oxides, Hafnium, Electron beam lithography, Photomasks, Electron beams, Metals, Etching, Scanning electron microscopy, Manufacturing

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Proceedings Article | 14 October 2011 Paper

Paper

Efficient large volume data preparation for electron beam lithography for sub-45nm node

Kang-Hoon Choi, Manuela Gutsch, Martin Freitag, Christoph Hohle, Luc Martin, Sebastien Bayle, Serdar Manakli, Patrick Schiavone

Proceedings Volume 8166, 816621 (2011) https://doi.org/10.1117/12.897586

KEYWORDS: Modulation, Electron beam lithography, Cadmium sulfide, Algorithm development, Point spread functions, Metals, Data corrections, Photomasks, Critical dimension metrology, Optics manufacturing

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SPIE Journal Paper | 1 October 2011

Fast characterization of line end shortening and application of novel correction algorithms in e-beam direct write

Martin Freitag, Kang-Hoon Choi, Manuela Gutsch, Christoph Hohle, Reinhard Galler, Michael Krüger, Ulf Weidenmüller

JM3, Vol. 10, Issue 04, 043012, (October 2011) https://doi.org/10.1117/12.10.1117/1.3659145

KEYWORDS: Cadmium, Semiconducting wafers, Computer simulations, Electron beams, Detection and tracking algorithms, Electron beam lithography, Point spread functions, Model-based design, Modulation, Nanoelectronics

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Proceedings Article | 4 April 2011 Paper

Paper

Data preparation solution for e-beam multiple pass exposure: reaching sub-22nm nodes with a tool dedicated to 45 nm

Luc Martin, Serdar Manakli, Sébastien Bayle, Kang-Hoon Choi, Manuela Gutsch, Jonathan Pradelles, Jessy Bustos

Proceedings Volume 7970, 797019 (2011) https://doi.org/10.1117/12.879059

KEYWORDS: Electroluminescence, Electron beam lithography, Line edge roughness, Electron beam direct write lithography, Lithography, Modulation, Standards development, Semiconducting wafers, Optical lithography, Logic

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Electron Beam Direct Write (EBDW) lithography is used in the IC manufacturing industry to sustain optical lithography for prototyping applications and low volume manufacturing. It is also used in R&D to develop advanced technologies, ahead of mass production. As microelectronics is now moving towards the 32nm node and beyond, the specifications in terms of dimension control and roughness becomes tighter. In addition, the shrink of the size and pitch of features significantly reduces the process window of lithographic tools. In EBDW, the standard proximity effects corrections only based on dose modulation show difficulties to provide the required Energy Latitude for patterning structures designed below 45nm. A new approach is thus needed to improve the process window of EBDW lithography and push its resolution capabilities. In previous papers, a new writing strategy based on multiple pass exposure has been introduced and optimized to pattern critical dense lines. This new technique consists in adding small electron Resolution Improvement Features (eRIFs) on top of the nominal structures. Then this new design is exposed in two successive passes with optimized doses. Previous studies were led to evaluate this new writing technique and establish rules to optimize the design of the eRIF. Significant improvements have already been demonstrated on SRAM and Logic structures down to the 16nm node. These results were obtained with a tool dedicated to the 45nm node. The next step of this work is thus to automatically implement the eRIF to correct large-scale layouts. In this paper, a new data preparation flow is set up for EBDW lithography. It uses the eRIF solution as a full advanced correction method for critical structures. The specific correction rules established in our previous studies are implemented to improve the CD control and the patterning of corners and line ends. Moreover, the dose and shape of the eRIFs are automatically tuned to best fit the nominal design. This work is done with "INSCALE^®", the new data preparation software from ASELTA Nanographics. This data preparation flow is then applied on layouts down to the 22nm node. Comparisons with the standard dose modulation flow demonstrate that adding eRIFs significantly improves the process window and thus the resolution of e-beam tools. It also shows that the multiple pass exposure technique can be used as a specific correction method on large scale layouts.

Proceedings Article | 4 April 2011 Paper

Paper

Fast characterization of line-end shortening and application of novel correction algorithms in e-beam direct write

Martin Freitag, Kang-Hoon Choi, Manuela Gutsch, Christoph Hohle, Reinhard Galler, Michael Krüger, Ulf Weidenmueller

Proceedings Volume 7970, 79701C (2011) https://doi.org/10.1117/12.879582

KEYWORDS: Cadmium sulfide, Computer simulations, Semiconducting wafers, Electron beam lithography, Electron beams, Detection and tracking algorithms, Point spread functions, Electron beam direct write lithography, Modulation, Nanoelectronics

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Proceedings Article | 2 April 2011 Paper

Paper

Geometrically induced dose correction: method and performance results

R. Galler, K.-H. Choi, M. Gutsch, C. Hohle, M. Krueger, L. Ramos, M. Suelzle, U. Weidenmueller

Proceedings Volume 7985, 79850S (2011) https://doi.org/10.1117/12.895205

KEYWORDS: Electron beam lithography, Line edge roughness, Cadmium sulfide, Photoresist processing, Chemically amplified resists, Cadmium, Scattering, Backscatter, Lithography, Modulation

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Proceedings Article | 2 April 2011 Paper

Paper

Line end shortening and application of novel correction algorithms in e-beam direct write

Martin Freitag, Kang-Hoon Choi, Manuela Gutsch, Christoph Hohle

Proceedings Volume 7985, 79850T (2011) https://doi.org/10.1117/12.891127

KEYWORDS: Semiconducting wafers, Computer simulations, Cadmium, Modulation, Detection and tracking algorithms, Electron beam lithography, Electron beams, Electron beam direct write lithography, Point spread functions, Nanoelectronics

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Proceedings Article | 25 September 2010 Paper

Paper

Geometrically induced dose correction method for e-beam lithography applications

R. Galler, K.-H. Choi, M. Gutsch, C. Hohle, M. Krueger, L. E. Ramos, M. Suelzle, U. Weidenmueller

Proceedings Volume 7823, 78231E (2010) https://doi.org/10.1117/12.864263

KEYWORDS: Electron beam lithography, Line edge roughness, Cadmium sulfide, Scattering, Laser scattering, Convolution, Photoresist processing, Modulation, Chemically amplified resists, Electron beams

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Proceedings Article | 27 May 2010 Paper

Paper

Practical resist model calibration for e-beam direct write processes

Martin Schulz, Hans-Jürgen Stock, Ulrich Klostermann, Wolfgang Hoppe, Lars Bomholt, Philipp Jaschinsky, Kang-Hoon Choi, Manuela Gutsch, Holger Sailer, Stephan Martens

Proceedings Volume 7748, 774818 (2010) https://doi.org/10.1117/12.866695

KEYWORDS: Calibration, Monte Carlo methods, Photoresist processing, Electron beam lithography, Data modeling, Process modeling, Scanning electron microscopy, Computer simulations, Scattering, Chemically amplified resists

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Proceedings Article | 3 April 2010 Paper

Paper

Conventional and reversed image printing in electron beam direct write lithography with proximity effect corrections based on dose and shape modification

Kang-Hoon Choi, Manuela Gutsch, Martin Freitag, Katja Keil, Philipp Jaschinsky, Christoph Hohle

Proceedings Volume 7637, 76370W (2010) https://doi.org/10.1117/12.846514

KEYWORDS: Electron beam direct write lithography, Cadmium sulfide, Image processing, Printing, Line width roughness, Line edge roughness, Electron beams, Point spread functions, Photoresist processing, Metrology

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Proceedings Article | 27 May 2009 Paper

Paper

Design verification for sub-70-nm DRAM nodes via metal fix using E-beam direct write

K. Keil, P. Jaschinsky, C. Hohle, K.-H. Choi, R. Schneider, M. Tesauro, F. Thrum, R. Zimmermann, J. Kretz

Proceedings Volume 7470, 747017 (2009) https://doi.org/10.1117/12.835206

KEYWORDS: Metals, Electron beam direct write lithography, Semiconducting wafers, Photomasks, Electron beam lithography, Wafer-level optics, Integrated optics, Etching, Reticles, Printing

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Proceedings Article | 18 March 2009 Paper

Paper

Fabrication of metrology test structures for future technology nodes using high-resolution variable-shaped e-beam direct write

László Szikszai, Philipp Jaschinsky, Katja Keil, Marc Hauptmann, Manfred Mört, Uwe Seifert, Christoph Hohle, Kang-Hoon Choi, Frank Thrum, Johannes Kretz, Vaeriano Ferreras Paz, Arie den Boef

Proceedings Volume 7271, 72712M (2009) https://doi.org/10.1117/12.814181

KEYWORDS: Scatterometry, Metrology, Line edge roughness, Critical dimension metrology, Line width roughness, Semiconducting wafers, Electron beams, Electron beam direct write lithography, Lithography, Cadmium

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Proceedings Article | 2 May 2008 Paper

Paper

Printing of sub-resolution shots in electron beam direct write with variable shaped beam machines

Frank Thrum, Johannes Kretz, Christoph Hohle, Kang-Hoon Choi, Katja Keil

Proceedings Volume 6792, 67920B (2008) https://doi.org/10.1117/12.798585

KEYWORDS: Scanning electron microscopy, Printing, Image resolution, Beam shaping, Calibration, Electron beams, Photoresist processing, Photomasks, Magnesium, Nanoelectronics

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Proceedings Article | 28 March 2008 Paper

Paper

MAGIC: a European program to push the insertion of maskless lithography

L. Pain, B. Icard, S. Tedesco, B. Kampherbeek, G. Gross, C. Klein, H. Loeschner, E. Platzgummer, R. Morgan, S. Manakli, J. Kretz, C. Holhe, K.-H. Choi, F. Thrum, E. Kassel, W. Pilz, K. Keil, J. Butschke, M. Irmscher, F. Letzkus, P. Hudek, A. Paraskevopoulos, P. Ramm, J. Weber

Proceedings Volume 6921, 69211S (2008) https://doi.org/10.1117/12.772472

KEYWORDS: Semiconducting wafers, Lithography, Photomasks, Manufacturing, Electron beams, Electron beam lithography, Nanofabrication, Computed tomography, Prototyping, Maskless lithography

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Proceedings Article | 20 March 2008 Paper

Paper

Gate edge roughness in electron beam direct write and its influence to device characteristics

Kang-Hoon Choi, Rok Dittrich, Matthias Goldbach, Christoph Hohle, Katja Keil, Thomas Marschner, Mark Tesauro, Frank Thrum, Roy Zimmermann, Johannes Kretz

Proceedings Volume 6921, 69210J (2008) https://doi.org/10.1117/12.772649

KEYWORDS: Line edge roughness, Line width roughness, Electron beam direct write lithography, Amplifiers, Metrology, Cadmium, Electron beams, Lithography, Critical dimension metrology, Modulation

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Proceedings Article | 3 May 2007 Paper

Paper

Data preparation for EBDW

Frank Thrum, Johannes Kretz, Tarek Lutz, Katja Keil, Christian Arndt, Kang-Hoon Choi, Ulrich Baetz, Nikola Belic, Melchior Lemke, Ulrich Denker, Juergen Gramss, Karl-Heinz Kliem

Proceedings Volume 6533, 65330K (2007) https://doi.org/10.1117/12.736976

KEYWORDS: Electron beam direct write lithography, Semiconducting wafers, Magnesium, Photomasks, Beam shaping, Electron beams, Optical lithography, Mask making, Vestigial sideband modulation, Lithography

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Proceedings Article | 29 March 2006 Paper

Paper

Evaluation of most recent chemically amplified resists for high resolution direct write using a Leica SB350 variable shaped beam writer

Anatol Schwersenz, Dirk Beyer, Monika Boettcher, Kang-Hoon Choi, Ulrich Denker, Christoph Hohle, Mathias Irmscher, Frank-Michael Kamm, Karl-Heinz Kliem, Johannes Kretz, Holger Sailer, Frank Thrum

Proceedings Volume 6153, 615347 (2006) https://doi.org/10.1117/12.655497

KEYWORDS: Semiconducting wafers, Photomasks, Optical lithography, Chemically amplified resists, Photoresist processing, Electron beam lithography, Beam shaping, Prototyping, Coating, Lithography

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Proceedings Article | 1 December 1997 Paper

Paper

Polymer light-emitting diodes of poly(m-phenylene-thiophene) derivative and tris(8-hydroxyquinoline) aluminum heterostructure

Lee Mi Do, Do Hoon Hwang, Kang Hoon Choi, Hyang Mok Lee, Sang Don Jung, Taehyoung Zyung, Bong-Soo Kang, Sung-Chul Shin

Proceedings Volume 3148, (1997) https://doi.org/10.1117/12.295543

KEYWORDS: Polymers, Electroluminescence, Heterojunctions, Aluminum, Electron transport, Organic light emitting diodes, Quantum efficiency, Luminescence, Polymer thin films, External quantum efficiency

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Showing 5 of 28 publications

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