The simulation and analysis of a hyperentangled photon source based on polarization and transverse momentum are achieved using the MATLAB platform. The analysis includes determining the emission pattern of a spontaneous parametric down-conversion source and the opening angles of emission cones and their dependence on wavelength. The energy conservation in the generation process and the correlations between the hyperentangled states are investigated. The results show that the generated states are maximally entangled, and Bell’s inequality test is proven to satisfy the theoretical limits. The proposed model gives better insight into the generation process of hyperentangled photons. It could be integrated with simulations of any arbitrary system based on a hyperentangled source.
A full quantum secure direct communication system is implemented in MATLAB environment using linear optical devices and single-photon detectors. MATLAB has the advantage of integrating the simulation of the whole system, which has optical and electronic blocks, all together into one script. Each block of the system (transmitter, receiver, and security check) is physically and mathematically explained, and the idea behind the code is presented. Results from running the whole simulation are in accordance with those obtained either from the published practical systems or from using state-of-the-art commercially available optical simulators. Our approach opens the way to simulate with confidence hyperentangled systems where experimental data are not yet widely available.
A simplified entanglement-based quantum secured direct communication system over optical fibers is proposed. Instead of the complicated optical and electronic devices used in the transmitter of standard systems for security checks, a decoy-state generator is integrated with the encoder. This provides a simple yet efficient and easy to implement solution to reveal the presence of intruders. A significant advantage of the proposed system is that it eliminates the need for quantum memory elements in the security check procedure performed in the transmitter. This greatly enhances the information transmission capacity of the quantum channel. All system parameters are defined from commercial specifications to account for components’ non-idealities. A numerical simulation shows that, after a 10-km transmission distance, a quantum state visibility of the polarization entangled Bell state of 88.57% is found, and a maximum coincidence rate of 4 × 107 Hz is achieved.
This paper proposes a new, robust and generic tool to investigate both the series and the shunt resistances, (parasitic resistances), as well as the ideality factor for new generations of solar cells. Focus is given to both dye-sensitized solar cells and perovskite solar cells, where the mesoporous TiO2 layer plays a significant role. A comprehensive study for the mesostructured-based solar cells with respect to conventional solar cells has been conducted regarding the parasitic resistance variation, the effect of the active material and technology on the ideality factor. Experimental data show acceptable agreement with data extracted from the proposed model where the targeted parameters have been estimated.
Solar simulators are built using various types of light sources having a spectrum similar to that of the sun. Some of these light sources include but are not limited to Xenon Arc Lamps, Metal Halide Arc Lamps and Quartz Tungsten Halogen Lamps. Since these lamps showed several disadvantages related to high cost, light stability, temporal stability and complexity, the usage of high-power LEDs was proposed as a simple and low-cost alternative. This solution boosted the popularity of solar simulators in the field of optical characterization. An array of LEDs is used to create a light source based on mixing different LED's colors with different spectrums, to produce a spectrum similar to that of the sun with a very low mismatch factor. In this paper we will introduce our implemented design with which we managed to reach a 12% mismatching factor at a distance 10 cm from the light source.
Porous TiO2 films are a crucial part of mesostructured solar cells (MSCs), both dye-sensitized solar cells (DSSCs) and perovskite solar cells (PSCs). However, the literature does not provide a clear description of the optical properties especially of the refractive index and scattering for those films relevant to MSCs. In DSSCs, two different porous TiO2 layers are included, the mesoporous active layer and the blocking layer. While the first is essential for the charge separation, electron collection and ion conduction, the second is intended for suppressing the loss of generated electrons to the electrolyte. Both layers consist of the same chemical compound, TiO2, but they have different porosities. For PSCs, the perovskite is deposited on a mesoporous TiO2 structure for enhancing the I–V characteristics
This paper investigates TiO2 films really used in fabricated MSCs. We utilize a technique allowing the determination of the effective refractive index and the film porosity for two different film kinds fabricated using sol-gel methods, discussed in our previous work, to determine the thickness of TiO2 films typically used in fabricating MSCs.
Thin film solar cells (TFSCs) where first introduced as a low cost alternative to conventional thick ones. TFSCs show low conversion efficiencies due to the used poor quality materials having weak absorption capabilities and to thin absorption layers. In order to increase light absorption within the active layer, specially near its absorption edge, photon management techniques were proposed. These techniques could be implemented on the top of the active layer to enhance the absorption capabilities and/or to act as anti-reflecting coating structures. When used at the back side, their purpose is to prevent the unabsorbed photons from escaping through the back of the cell.
In this paper, we coupled the finite difference time-domain (FDTD) algorithm for simulating light interaction within the cell with the commercial simulator Comsol Multiphysics 4.3b for describing carrier transports. In order to model the dispersive and absorption properties of various used materials, their complex refractive indices were estimated using the Lorentzian-Drude (LD) coefficients. We have calculated the absorption profile in the different layers of the cell, the external quantum efficiency and the power conversion efficiency achieved by adding dielectric nanospheres on the top of the active layer. Besides that, the enhancement observed after the addition of dielectric nanospheres at the back side of the active layer was computed. The obtained results are finally compared with the effects of using textured surface and nanowires on the top in plus of cascaded 1D and 2D photonic crystals on the back.
An ultra-compact hybrid plasmonic waveguide ring electro-optical modulator is designed to be easily fabricated on silicon on insulator (SOI) substrates using standard silicon photonics technology. The proposed waveguide is based on a buried standard silicon waveguide of height 220 nm topped with polymer and metal. The key advantage of this novel design is that only the silicon layer of the waveguide is structured as a coupled ring resonator. Then, the device is covered with electro-optical polymer and metal in post processes with no need for lithography or accurate mask alignment techniques. The simple fabrication method imposes many design challenges to obtain a resonator of reasonable loaded quality factor and high extinction ratio. Here, the performance of the resonator is optimized in the telecom wavelength range around 1550 nm using 3D FDTD simulations. The design of the coupling junction between the access waveguide and the tightly bent ring is thoroughly studied. The extension of the metal over the coupling region is exploited to make the critical dimension of the design geometry at least 2.5 times larger than conventional plasmonic resonators and the design is thus more robust. In this paper, we demonstrate an electro-optical modulator that offers an insertion loss < 1 dB, a modulation depth of ~12 dB for an applied peak to peak voltage of only 2 V and energy consumption of ~1.74 fJ/bit. The performance is superior to previously reported hybrid plasmonic ring resonator based modulators while the design shows robustness and low fabrication cost.
Silicon photonics offer a promising solution to high speed chip-to-chip interconnects implied by the next generation of computing and communication systems. Electro-optical modulators are the key devices enabling data to be imparted onto an optical carrier wave to propagate in silicon photonic links. Modulators that utilize transparent conducting oxides as the electro-optical active layer in hybrid plasmonic waveguides have recently received a lot of attention. However, no study has considered embedding the conducting oxide in hybrid plasmonic ring and disk structures. In this paper, we propose a novel hybrid plasmonic micro-ring modulator employing an indium-tin-oxide (ITO) layer on silicon-on-insulator (SOI) platform. A pure standard silicon access waveguide is introduced and a detailed discussion of the coupling junction design is presented. Due to its unique electro-optical properties, a unity order change in the refractive index of ITO is attainable and exploited to make a significant shift in the resonance wavelength eliminating the need for high quality factor resonance without sacrificing power consumption. Unlike conventional ring modulators, the proposed modulation mechanism uses the combined effect of changes in both the real and the imaginary parts of the refractive index to control the resonance wavelength and extinction ratio. We comprehensively study the modulator performance and the transmission spectra using FDTD simulations. Optimization of the design leads to a high modulation depth of about 20 dB for an applied voltage of 2V. The design has an estimated total capacitance less than 2 fF.
We have simulated a photovoltaic (PV) pn junction where a texturing structure from Silicon nanowires (NWs) is added. While the NWs diameter was kept constant at a value of 100 nm, their lengths were varied over the range from 1 μm to 100 μm. A noticeable enhancement in the device efficiency is found. This improvement is due to that the added texture has significantly decreased the optical reflectance and increased the optical absorption of the surface.
A comparison between Silicon (Si) which is an indirect band-gap semiconductor and Gallium Arsenide (GaAs) as a
direct band-gap semiconductor for vertical-aligned nanowire radial pn junction-based photovoltaic (PV) devices is
presented. The study takes place through determining the fill factor, the power conversion efficiency, the optimum
device length and the spectrum of the quantum efficiency. The sensitivity of both Si and GaAs nanowire to temperature
variations is also investigated. Finally, the array effect for nanowires of each material alone then of arrays of mixed
elements' types is simulated. The results are found to be in accordance with the available experimental measurements.
Exploring renewable, sustainable and green energy resources is a critical challenge for scientists and engineers. Large-scale ambient energy, such as the solar energy is available but current technologies are not yet ready to capture it with great efficiency. The sun radiates visible light and also infrared energy, some
of which is soaked up by the earth and later released as radiation for hours after sunset. In this study, the use of arrays of carbon nanotubes (CNT) Field Effect Transistors (FET) as photovoltaic (PV) elements is investigated. The interaction between electromagnetic waves and the CNT array is simulated using COMSOL Multiphysics in order to calculate the amount of absorbed power. The effects of the distribution of PV elements on the array performance are studied in order to maximize power absorption for the same number of elements.
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