Mask specification has been playing ever-increasing role for wafer process optimization with tightening design rule. It is very critical to optimize specifications and sampling sizes to ensure quality as well as minimize cost and TPT for high volume manufacturing. In this paper, key parameters for mask specification affecting wafer litho process window will be discussed. Examples of how to derive key mask specification based on the litho process margin will be examined. The mask CD targeting control and plate to plate CD variation reduction strategy will be discussed.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.